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VI101价格
参考价格：￥5.7685
型号：VI10150C-E3/4W 品牌：VIS 备注：这里有VI101多少钱，2026年最近7天走势，今日出价，今日竞价，VI101批发/采购报价，VI101行情走势销售排行榜，VI101报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- | VISHAYVishay Siliconix 威世威世科技公司 |   | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High efficiency operation FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.64 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：723.43 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.64 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 10A 150V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：DIODE SCHOTTKY 10A 150V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.49 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V) Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS | MOSPEC 统懋 | | ||
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc | MOTOROLA 摩托罗拉 | | ||
WIDE BAND AMPLIFIER CHIPS DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the | NEC 瑞萨 | | ||
Operational Amplifiers 文件：509.25 Kbytes Page：17 Pages | NSC 国半 | | ||
Operational Amplifiers 文件：509.25 Kbytes Page：17 Pages | NSC 国半 | |
VI101产品属性
- 类型
描述
- 型号
VI101
- 功能描述
Analog IC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GXLTONE |
24+ |
SOIC32 |
7 |
||||
Vishay Semiconductor Diodes Di |
22+ |
TO262AA |
9000 |
原厂渠道,现货配单 |
|||
VISHAY/威世 |
26+ |
SMD |
8635 |
一级代理优势现货,全新正品直营店 |
|||
Vishay(威世) |
25+ |
TO-262AA |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
IR |
23+ |
DIP-8 |
8000 |
只做原装现货 |
|||
ITC |
23+ |
CLCC |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
Vishay General Semiconductor - |
25+ |
TO-262AA |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
26+ |
N/A |
79000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY/威世 |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY |
25+ |
TO-262 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
VI101规格书下载地址
VI101参数引脚图相关
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- VI-419
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- VI-351
- VI-323
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- VI-318
- VI-315
- VI-303
- VI-302
- VI-301-DP-RC-S
- VI30100S-E3/4W
- VI30100C-E3/4W
- VI-301
- VI-2W3-CV
- VI-26R-CV
- VI-26L-CU
- VI-263-CV
- VI-262-CU
- VI-261-CV
- VI-260-CU
- VI-253-CU
- VI-24
- VI-220-CW
- VI-213-CV
- VI-210-CV
- VI20202G-M3/4W
- VI20202C-M3/4W
- VI-201-DP-RC-S
- VI-201-DP-FC-S
- VI-201
- VI-200
- VI200
- VI-102
- VI10150C-E3/4W
- VHZ555
- VHV12-2.0K1000P
- VHV12-1.0K2000P
- VHT-8102
- VHT470M160
- VHT4700M16
- VHT4.7M63
- VHT33M160
- VHT330M63
- VHT330M50
- VHT1M63
- VHT1M50
- VHT1M35
- VHT1M25
- VHT1M16
- VHT10M63
- VHT1000M50
- VHT.1M50
- VHS-9V
- VHS-95
- VHS-8V
- VHS-7V
- VHS-5V
- VHS555
- VHS-45
- VHS4
- VHS-3V
- VHS-2V
- VHS1-S5-S5-SIP
- VHS1-S5-S15-SIP
- VHS1-S12-S12-SIP
- VHS102
- VHRR-9N
- VHRR-8N
- VHRR-7N
- VHRR-5N
- VHR-9N
- VHR-8N
VI101数据表相关新闻
VI-203-CX一定原装货支持检测
VI-203-CX一定原装货支持检测
2025-3-28VI-2N1-IU只要有货都是原装
VI-2N1-IU只要有货都是原装
2024-10-15VI-26L-EU原厂原装，只做原装
VI-26L-EU原厂原装，只做原装
2024-7-25VHR5-2815S DC-DC转换器
VHR5-2815S非常适合军事、航空电子、无人系统以及制造设备和控制中的非飞行关键解决方案。
2021-6-2VHR5-2812S DC-DC转换器
非常适合军事、航空电子、无人系统以及制造设备和控制中的非飞行关键解决方案。
2021-6-2VHR5-283R3S DC-DC转换器器 有需要请联系
非常适合军事、航空电子、无人系统以及制造设备和控制中的非飞行关键解决方案。
2021-6-2
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