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VI101价格
参考价格：￥5.7685
型号：VI10150C-E3/4W 品牌：VIS 备注：这里有VI101多少钱，2025年最近7天走势，今日出价，今日竞价，VI101批发/采购报价，VI101行情走势销售排行榜，VI101报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- | VishayVishay Siliconix 威世威世科技公司 |   | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VishayVishay Siliconix 威世威世科技公司 | | ||
High efficiency operation FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：723.43 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.64 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.64 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.31 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 10A 150V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：DIODE SCHOTTKY 10A 150V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.96 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.4 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.49 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：168.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
SHIELDED SMT POWER INDUCTORS ● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment | PRODUCTWELL | | ||
0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD | STMICROELECTRONICS 意法半导体 | | ||
Precision Wirewound Resistors 100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t | Riedon | | ||
Smooth, high torque, roller ratchet handle 文件：254.3 Kbytes Page：3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Precision Wirewound Resistors 文件：318.25 Kbytes Page：2 Pages | Riedon | |
VI101产品属性
- 类型
描述
- 型号
VI101
- 功能描述
Analog IC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
|||
VICOR |
23+ |
模块 |
900 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
VICOR |
25+ |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
Vishay General Semiconductor - |
25+ |
TO-262AA |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
GXLTONE |
24+ |
SOIC32 |
7 |
||||
IR |
22+ |
DIP-8 |
6000 |
终端可免费供样,支持BOM配单 |
|||
VICOR |
2223+ |
26800 |
只做原装正品假一赔十为客户做到零风险 |
||||
VICOR |
2018 |
模块 |
300 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
VICOR |
23+ |
MODULE |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VICOR |
23+ |
NA |
8021 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
VI101规格书下载地址
VI101参数引脚图相关
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- VI-315
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- VI-301-DP-RC-S
- VI30100S-E3/4W
- VI30100C-E3/4W
- VI-301
- VI-2W3-CV
- VI-26R-CV
- VI-26L-CU
- VI-263-CV
- VI-262-CU
- VI-261-CV
- VI-260-CU
- VI-253-CU
- VI-24
- VI-220-CW
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- VI-201
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- VHZ555
- VHV12-2.0K1000P
- VHV12-1.0K2000P
- VHT-8102
- VHT470M160
- VHT4700M16
- VHT4.7M63
- VHT33M160
- VHT330M63
- VHT330M50
- VHT1M63
- VHT1M50
- VHT1M35
- VHT1M25
- VHT1M16
- VHT10M63
- VHT1000M50
- VHT.1M50
- VHS-9V
- VHS-95
- VHS-8V
- VHS-7V
- VHS-5V
- VHS555
- VHS-45
- VHS4
- VHS-3V
- VHS-2V
- VHS1-S5-S5-SIP
- VHS1-S5-S15-SIP
- VHS1-S12-S12-SIP
- VHS102
- VHRR-9N
- VHRR-8N
- VHRR-7N
- VHRR-5N
- VHR-9N
- VHR-8N
VI101数据表相关新闻
VI-203-CX一定原装货支持检测
VI-203-CX一定原装货支持检测
2025-3-28VI-2N1-IU只要有货都是原装
VI-2N1-IU只要有货都是原装
2024-10-15VI-26L-EU原厂原装，只做原装
VI-26L-EU原厂原装，只做原装
2024-7-25VHR5-2815S DC-DC转换器
VHR5-2815S非常适合军事、航空电子、无人系统以及制造设备和控制中的非飞行关键解决方案。
2021-6-2VHR5-2812S DC-DC转换器
非常适合军事、航空电子、无人系统以及制造设备和控制中的非飞行关键解决方案。
2021-6-2VHR5-283R3S DC-DC转换器器 有需要请联系
非常适合军事、航空电子、无人系统以及制造设备和控制中的非飞行关键解决方案。
2021-6-2
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