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VF30100S价格
参考价格：￥4.5769
型号：VF30100S-E3/4W 品牌：Vishay 备注：这里有VF30100S多少钱，2025年最近7天走势，今日出价，今日竞价，VF30100S批发/采购报价，VF30100S行情走势销售排行榜，VF30100S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VF30100S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te | VishayVishay Siliconix 威世威世科技公司 |   | |
VF30100S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.88 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
VF30100S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.97 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
VF30100S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.13 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
VF30100S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：139.41 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
VF30100S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | |
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2 | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世威世科技公司 | | ||
High efficiency operation FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2 | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2 | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2 | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.97 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.46 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.97 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.46 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 100V 30A ITO220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.88 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.97 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.46 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：152.57 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR） 描述：DIODE SCHOTTKY 100V 30A ITO220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | ||
PRODUCT SPECIFICATION Cable/Wire stripperss | JOKARI | | ||
Up to 1000mA | LED Driver Up to 1000mA | LED Driver FEATURES: • Step Down DC/DC LED driver • Constant current output • Wide (4:1) input voltage range • High efficiency up to 95 • Operating Temperature range -40ºC to +85ºC • Open and Short LED Protection • PWM/Digital and Analog Voltage dimming | AIMTEC | | ||
Up to 1000mA | LED Driver Up to 1000mA | LED Driver FEATURES: • Wire Connections • Constant current output • Wide (4:1) input voltage range • High efficiency up to 95 • Step Down DC/DC LED driver • Operating Temperature range -40ºC to +85ºC • Open and Short LED Protection • PWM/Digital | AIMTEC | | ||
Up to 1000mA | LED Driver 文件：440.91 Kbytes Page：14 Pages | AIMTEC | | ||
Up to 1000mA | LED Driver 文件：353.85 Kbytes Page：14 Pages | AIMTEC | |
VF30100S产品属性
- 类型
描述
- 型号
VF30100S
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
24+ |
NA/ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
VISHAY/威世 |
24+ |
NA/ |
3275 |
原厂直销,现货供应,账期支持! |
|||
VISHAY |
24+ |
TO220 |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY |
24+ |
N/A |
5000 |
十年沉淀唯有原装 |
|||
VISHAY |
13+ |
TO-220FP |
2837 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY |
23+ |
ITO-220-3 |
50000 |
原装正品 支持实单 |
|||
VISHAY |
2023+ |
TO220 |
5800 |
进口原装,现货热卖 |
|||
VISHAY/威世 |
25+ |
TO-220 |
880000 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
22+ |
TO-220F |
12245 |
现货,原厂原装假一罚十! |
|||
VISHAY |
25+ |
TO-220 |
22000 |
原厂原装,价格优势 |
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DdatasheetPDF页码索引
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