VF10150价格

参考价格:¥3.1944

型号:VF10150C-E3/4W 品牌:Vishay 备注:这里有VF10150多少钱,2025年最近7天走势,今日出价,今日竞价,VF10150批发/采购报价,VF10150行情走势销售排行榜,VF10150报价。
型号 功能描述 生产厂家 企业 LOGO 操作

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VishayVishay Siliconix

威世威世科技公司

High efficiency operation

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:78.64 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:161.64 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:723.43 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:78.64 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:79.37 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:168.31 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:161.64 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:168.31 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 全封装,隔离接片 包装:卷带(TR) 描述:DIODE ARRAY SCHOTTKY 150V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:78.64 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:79.1 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

文件:156.49 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:79.1 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:76.18 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 全封装,隔离接片 包装:带盒(TB) 描述:DIODE SCHOTTKY 150V 10A ITO220AB 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:168.07 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:168.07 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

整流器 10A,150V,TRENCH SKY RECT.

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:79.1 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

AT9034 TRI

Description 8W LED Downlight w/Dimm Driver - 110Deg beam - Satin Chrome - TRI-CCT

ATOM

爱特姆

AT9012 TRI

Description 11W LED Downlight with Dimmable Driver - 90 degree beam - Satin Chrome - TRI - SER II

ATOM

爱特姆

AT9019

Description 170mm Downlight Extension Plate - Satin Chrome

ATOM

爱特姆

Nylon PCB Supports - Imperial Spacing

文件:113.77 Kbytes Page:1 Pages

Heyco

Heyco짰 Nylon PCB Supports - Imperial Spacing

文件:116.57 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

VF10150产品属性

  • 类型

    描述

  • 型号

    VF10150

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    High-Voltage Trench MOS Barrier Schottky Rectifier

更新时间:2025-12-27 11:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vishay
916
na
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SANYO/三洋
20+
MCPH3
36800
原装优势主营型号-可开原型号增税票
VISHAY/威世
23+
TO-220-3
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
三年内
1983
只做原装正品
SANYO/三洋
21+
MCPH3
880000
明嘉莱只做原装正品现货
NEXPERIA/安世
23+
SOT109-1
69820
终端可以免费供样,支持BOM配单!
VISHAY
23+
TO-220-3
50000
全新原装正品现货,支持订货
VISHAY/威世
2022+
TO-220
12888
原厂代理 终端免费提供样品
22+
TO-220F
20000
只做原装
SANYO/三洋
新年份
MCPH3
84000
原装正品大量现货,要多可发货,实单带接受价来谈!

VF10150数据表相关新闻