RGBW Color Sensor with I2C Interface

DESCRIPTION VEML6040 color sensor senses red, green, blue, and white light and incorporates photodiodes, amplifiers, and analog / digital circuits into a single chip using CMOS process. With the color sensor applied, the brightness, and color temperature of backlight can be adjusted base on a

RGBW Color Sensor with I2C Interface

DESCRIPTION VEML6040 color sensor senses red, green, blue, and white light and incorporates photodiodes, amplifiers, and analog / digital circuits into a single chip using CMOS process. With the color sensor applied, the brightness, and color temperature of backlight can be adjusted base on a

RGBW Color Sensor with I2C Interface

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RGBW Color Sensor with I2C Interface

RGBW Color Sensor with I2C Interface

DESCRIPTION VEML6040 color sensor senses red, green, blue, and white light and incorporates photodiodes, amplifiers, and analog / digital circuits into a single chip using CMOS process. With the color sensor applied, the brightness, and color temperature of backlight can be adjusted base on a

RGBW Color Sensor with I2C Interface

DESCRIPTION VEML6040 color sensor senses red, green, blue, and white light and incorporates photodiodes, amplifiers, and analog / digital circuits into a single chip using CMOS process. With the color sensor applied, the brightness, and color temperature of backlight can be adjusted base on a

RGBW Color Sensor with I2C Interface

DESCRIPTION VEML6040 color sensor senses red, green, blue, and white light and incorporates photodiodes, amplifiers, and analog / digital circuits into a single chip using CMOS process. With the color sensor applied, the brightness, and color temperature of backlight can be adjusted base on a

封装/外壳：4-TFLGA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RGBW COLOR SENSOR I2C INTERFACE 传感器，变送器 颜色传感器

包装：散装 描述：EVAL BOARD FOR VEML6040 开发板，套件，编程器 评估板 - 传感器

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D