| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VBZE50P03 | P-Channel 30 V (D-S) MOSFET 文件：626.22 Kbytes Page：8 Pages | VBSEMI 微碧半导体 |   | |
VBZE50P03 | MOSFET | VBSEMI 微碧半导体 | | |
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -47A, RDS(ON) =20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =32mW @VGS = -4.5V. Lead free product is acquired. | CET-MOS 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
P-Channel 30 V (D-S) MOSFET 文件：1.0229 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 30 V (D-S) MOSFET 文件：1.02287 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 30-V (D-S) MOSFET 文件：967.38 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
72000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VBsemi(台湾微碧) |
2447 |
TO-252 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
1500 |
原装现货 |
VBZE50P03芯片相关品牌
VBZE50P03规格书下载地址
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VBZE50P03数据表相关新闻
VC0703NLEB
VC0703NLEB CC2541F256RHAR TPA3118D2DAPR TPS71933-28DRVR
2023-5-25VBPW34VR
VBPW34VR
2023-2-3VBE5415
VBE5415,TO-252,全新原装,门市自取或当天发货.
2022-6-25VBE2104N
VBE2104N,TO-252,P-Channel 100 V (D-S) MOSFET
2022-6-25VC7645
VC7645，当天发货0755-82732291全新原装现货或门市自取.
2020-9-22VCC6-Q/R 10Mhz~270 Mhz
VCC6-Q/R 10Mhz~270 Mhz
2020-9-18
DdatasheetPDF页码索引
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