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VBZE40N03

MOSFET

VBSEMI

微碧半导体

Low Gate Charge Simple Drive Requirement

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for all commercial-industrial applications and suited for low voltage applica

A-POWER

富鼎先进电子

N CHANNEL ENHANCEMENT MODE POWER MOSFET

Power MOSFETs from Silicon Standardprovide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widelypreferred for commercialand industrial applications and suited for low voltage applications su

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • DC/DC Conversion - System Power

VBSEMI

微碧半导体

Fast Switching Characteristic

文件:56.65 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

N-Channel 30-V (D-S) MOSFET

文件:959.97 Kbytes Page:8 Pages

VBSEMI

微碧半导体

更新时间:2025-10-18 11:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBSEMI(台湾微碧)
24+
TO-252
5000
场效应管大量原装现货
24+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
VBsemi(台湾微碧)
2447
TO-252
105000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
1500
原装现货

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