| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VBZE20N10 | MOSFET | VBSEMI 微碧半导体 |   | |
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM20N10E uses advanced trench technology and design to provide excellent RDS(ON) with | ADV 爱德微 | | ||
Fast Switching 文件：67.84 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 100-V (D-S) MOSFET 文件：773.53 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Power MOSFET 文件：1.33991 Mbytes Page：5 Pages | JIANGSU 长电科技 | | ||
20 Amps, 95Volts N-CHANNEL Power MOSFET 文件：472.48 Kbytes Page：6 Pages | CHONGQING 平伟实业 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBSEMI(台湾微碧) |
24+ |
TO-252 |
5000 |
场效应管大量原装现货 |
|||
VBsemi(台湾微碧) |
2447 |
TO-252 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
24+ |
N/A |
79000 |
一级代理-主营优势-实惠价格-不悔选择 |
VBZE20N10芯片相关品牌
VBZE20N10规格书下载地址
VBZE20N10参数引脚图相关
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VBZE20N10数据表相关新闻
VC0703NLEB
VC0703NLEB CC2541F256RHAR TPA3118D2DAPR TPS71933-28DRVR
2023-5-25VBPW34VR
VBPW34VR
2023-2-3VBE5415
VBE5415,TO-252,全新原装,门市自取或当天发货.
2022-6-25VBE2104N
VBE2104N,TO-252,P-Channel 100 V (D-S) MOSFET
2022-6-25VC7645
VC7645，当天发货0755-82732291全新原装现货或门市自取.
2020-9-22VCC6-Q/R 10Mhz~270 Mhz
VCC6-Q/R 10Mhz~270 Mhz
2020-9-18
DdatasheetPDF页码索引
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