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VBT4045BP价格
参考价格：￥4.9407
型号：VBT4045BP-E3/4W 品牌：Vishay 备注：这里有VBT4045BP多少钱，2025年最近7天走势，今日出价，今日竞价，VBT4045BP批发/采购报价，VBT4045BP行情走势销售排行榜，VBT4045BP报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VBT4045BP | Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：92.25 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 |   | |
TMBS짰 (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter | ISC 无锡固电 | | ||
TMBS짰 (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：93.12 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：95.48 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：92.25 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：92.25 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT） 描述：DIODE SCHOTTKY 45V 40A TO263AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：92.25 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：92.25 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：87.62 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE SCHOTTKY 40A 45V TO-263AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • 5µs SCSOA • Square RBSOA • 100 of The Parts Tested for ILM ① • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free, RoHS Compliant • Aut | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • 5µs SCSOA • Square RBSOA • 100 of The Parts Tested for ILM ① • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free, RoHS Compliant • Aut | IRF | | ||
JST PH 4-Pin Socket to Color Coded Cable - 200mm 文件：1.30238 Mbytes Page：4 Pages | Adafruit | | ||
800 TO 4000 MHz TO-8 CASCADABLE AMPLIFIER 文件：179.68 Kbytes Page：2 Pages | TELEDYNE 华特力科 | | ||
STM32F3 series in-application programming 文件：391.96 Kbytes Page：16 Pages | STMICROELECTRONICS 意法半导体 | |
VBT4045BP产品属性
- 类型
描述
- 型号
VBT4045BP
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
VISHAY/威世 |
TO-263-2 |
6000 |
只做原装正品,卖元器件不赚钱交个朋友 |
||||
Vishay(威世) |
2511 |
N/A |
11800 |
电子元器件采购降本 30%!原厂直采,砍掉中间差价 |
|||
VISHAY/威世 |
2023+ |
TO-263-2 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
|||
VISHAY/威世 |
25 |
TO-263-2 |
6000 |
原装正品 |
|||
VISHAY/威世 |
2021+ |
TO-263-2 |
7600 |
原装现货，欢迎询价 |
|||
VISHAY |
20+ |
TO263AB |
500 |
全新原装 |
|||
VISHAY/威世 |
24+ |
TO263AB |
86000 |
郑重承诺只做原装进口现货 |
|||
Vishay |
23+ |
肖特基二极管和整流二极管 |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
VISHAY/威世 |
24+ |
TO-263-2 |
6000 |
全新原装深圳仓库现货有单必成 |
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DdatasheetPDF页码索引
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