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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VBT2060C-E3 | Low forward voltage drop, low power losses FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and | VishayVishay Siliconix 威世科技 |   | |
VBT2060C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技 | | |
VBT2060C-E3 | Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter | ISC 无锡固电 | | |
VBT2060C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A | VishayVishay Siliconix 威世科技 | | |
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE SCHOTTKY 20A 60V TO-263AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE SCHOTTKY 20A 60V TO-263AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
Low forward voltage drop, low power losses FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and | VishayVishay Siliconix 威世科技 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技 | |
VBT2060C-E3产品属性
- 类型
描述
- 型号
VBT2060C-E3
- 制造商
Vishay Semiconductors
- 功能描述
20A,60V,DUAL TRENCH SKY RECT.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
VIS |
23+ |
TO-263AB |
6000 |
原装正品，支持实单 |
|||
Vishay Semiconductor Diodes Di |
23+ |
TO263AB |
8000 |
只做原装现货 |
|||
VISHAY/威世 |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VIS |
22+ |
TO-263AB |
6000 |
十年配单,只做原装 |
|||
VISHAY/威世 |
23+ |
TO-263AB |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VIS |
25+ |
TO-263AB |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY |
25+ |
TO-263 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
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DdatasheetPDF页码索引
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