位置：首页 > IC中文资料 > VBMB15R07S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VBMB15R07S | N-Channel 500V(D-S) Super Junction Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Switch Mode Pow | VBSEMI 微碧半导体 |   | |
VBMB15R07S | MOSFET | VBSEMI 微碧半导体 | | |
N-Channel 500V(D-S) Super Junction Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Switch Mode Pow | VBSEMI 微碧半导体 | | ||
N-Channel 500V(D-S) Super Junction Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Switch Mode Pow | VBSEMI 微碧半导体 | | ||
N-Channel 500V(D-S) Super Junction Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Switch Mode Pow | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi(台湾微碧) |
2447 |
TO-220F |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
VBSEMI |
24+ |
con |
35960 |
查现货到京北通宇商城 |
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2020-9-22
DdatasheetPDF页码索引
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