| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VBM1203M | N-Channel 200 V (D-S) MOSFET FEATURES • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch • DT-Trench Power MOSFET | VBSEMI 微碧半导体 |   | |
VBM1203M | Power MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | | |
VBM1203M | N-Channel 200 V (D-S) MOSFET 文件：509.79 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | |
N-Channel 200 V (D-S) MOSFET FEATURES • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch • DT-Trench Power MOSFET | VBSEMI 微碧半导体 | | ||
Switching application 文件：192.98 Kbytes Page：4 Pages | KODENSHI 可天士 | | ||
Appliance inlet for low voltage, Snap-in Mounting, Front Side, Solder or Quick-connect Terminal 文件：316.56 Kbytes Page：3 Pages | SCHURTER 硕特 | | ||
SPEED DRIVER INTEGRATED SERIES 文件：582.7 Kbytes Page：1 Pages | ASSUN | | ||
N-Channel 200 V (D-S) MOSFET 文件：1.52919 Mbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
InGenius High-CMRR Balanced Input Line Receiver 文件：157.56 Kbytes Page：10 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi(台湾微碧) |
2447 |
TO-220AB |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VBSEMI |
24+ |
con |
35960 |
查现货到京北通宇商城 |
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VBM1203M规格书下载地址
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VBM1203M数据表相关新闻
VC0703NLEB
VC0703NLEB CC2541F256RHAR TPA3118D2DAPR TPS71933-28DRVR
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VBPW34VR
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进口代理
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2020-9-22
DdatasheetPDF页码索引
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