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VB30120S价格
参考价格：￥4.6279
型号：VB30120S-E3/4W 品牌：Vishay 备注：这里有VB30120S多少钱，2026年最近7天走势，今日出价，今日竞价，VB30120S批发/采购报价，VB30120S行情走势销售排行榜，VB30120S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VB30120S | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VISHAYVishay Siliconix 威世威世科技公司 |   | |
VB30120S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件：165.91 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter | ISC 无锡固电 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Low forward voltage drop, low power losses High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：731.92 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：726.92 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.9 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件：165.91 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.43 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.43 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE SCHOTTKY 120V 30A TO263AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件：165.91 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.9 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
肖特基二极管与整流器 30 Amp 120 Volt Single TrenchMOS | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件：165.91 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.9 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.43 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.43 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.9 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件：165.91 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：158.13 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：154.91 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE SCHOTTKY 120V 30A TO263AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
肖特基二极管与整流器 30 Amp 120 Volt Single TrenchMOS | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：154.91 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：154.91 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High efficiency operation 文件：90.11 Kbytes Page：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：79.86 Kbytes Page：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
4-BIT SINGLE CHIP MICROCOMPUTERS OUTLINE OF CHARACTERISTICS The GMS300 series is a family of 4-bit, single chip CMOS microcomputer. Since it can form a system by one chip, it contributes to cost reduction and higher efficiency in system. Characteristics • Program memory : 512 bytes for GMS30004/012 | HYNIX 海力士 | | ||
30A, 1200V Hyperfast Diode The RHRG30120 is a hyperfast diode with soft recovery characteristics (trr | INTERSIL | | ||
30A, 1200V Hyperfast Diode The RHRG30120 is a hyperfast diode with soft recovery characteristics (trr | FAIRCHILD 仙童半导体 | | ||
30A, 1200V Hyperfast Diode The RHRP30120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of s | FAIRCHILD 仙童半导体 | | ||
30A, 1200V Ultrafast Diode The RURP30120 is an ultrafast diode with soft recovery characteristic (trr Features • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . | INTERSIL | |
VB30120S产品属性
- 类型
描述
- 型号
VB30120S
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BLOCK |
25+ |
N/A |
550 |
BLOCK电源领域全系列订货 |
|||
VISHAY |
25+23+ |
TO-263 |
15499 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY/威世 |
22+ |
TO-263 |
6000 |
十年配单,只做原装 |
|||
VISHAY |
26+ |
N/A |
5000 |
十年沉淀唯有原装 |
|||
VISHAY/威世 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY/威世 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
Block |
24+ |
NA |
1964 |
进口原装正品优势供应 |
|||
VISHAY/威世 |
23+ |
TO-263 |
6950 |
实实在在-只做原装正品 |
VB30120S芯片相关品牌
VB30120S规格书下载地址
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二三极管、连接器、模块、光耦、电容电阻、单片机、处理器、晶振、传感 器、逻辑芯片、电源芯片、放大器、
2019-3-12
DdatasheetPDF页码索引
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