P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

P-Channel 20-V (D-S) MOSFET

文件：733.12 Kbytes Page：9 Pages

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

100V N-Channel MOSFET

General Description The AON2290 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS 100V ID (at VGS=1

10-18GHz Low Noise, Variable Gain Amplifier

Description The CHA2290 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process

WASHERS

文件：68.27 Kbytes Page：1 Pages

PLL Synthesizer Module

文件：230.62 Kbytes Page：2 Pages

Surface Mount Zener Diodes

文件：66.93 Kbytes Page：3 Pages