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VB20150S价格
参考价格：￥4.1112
型号：VB20150S-E3/8W 品牌：Vishay 备注：这里有VB20150S多少钱，2025年最近7天走势，今日出价，今日竞价，VB20150S批发/采购报价，VB20150S行情走势销售排行榜，VB20150S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VB20150S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a | VishayVishay Siliconix 威世威世科技公司 |   | |
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世威世科技公司 | | ||
Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter | ISC 无锡固电 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and | VishayVishay Siliconix 威世威世科技公司 | | ||
High efficiency operation FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and | VishayVishay Siliconix 威世威世科技公司 | | ||
Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter | ISC 无锡固电 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：143.4 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：152.99 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.61 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.61 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件管件 描述：DIODE SCHOTTKY 150V 20A TO263AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.61 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.61 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：149.4 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：158.99 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世威世科技公司 | | ||
肖特基二极管与整流器 20 Amp 150 Volt Single TrenchMOS | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.51 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE SCHOTTKY 150V 20A TO263AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.51 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.51 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.51 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Low forward voltage drop, low power losses 文件：89.01 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5.0 A | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.89 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
20A SCHOTTKY BARRIER RECTIFIERS PRODUCT FEATURES 1. FLAMMABILITY CLASSIFICATION 94V-0 2. EXTREMELY LOW VF 3. LOW STORED CHARGE 4. MAJORITY CARRIER CONDUCTION 5. LOW POWER LOSS/HIGH EFFICIENCY 6. CASE: TRANSFER MOLDED TO-220AB FOR MBR20xxxCT ITO-220AB FOR MBR20xxxFCT 7. DIMENSIONS IN INCHES AND (MILLIMETERS) 8. LEADS: SOL | FRONTIER | | ||
INDUSTRIAL MICROWAVE GENERATORS 2450 MHZ 文件：240.25 Kbytes Page：4 Pages | MKS | | ||
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers 文件：778.85 Kbytes Page：2 Pages | THINKISEMI 思祁半导体 | | ||
LOW VF SCHOTTKY RECTIFIER 文件：62.01 Kbytes Page：3 Pages | PANJIT 強茂 | | ||
LOW VF SCHOTTKY RECTIFIER 文件：72.78 Kbytes Page：4 Pages | PANJIT 強茂 | |
VB20150S产品属性
- 类型
描述
- 型号
VB20150S
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
3295 |
原厂直销,现货供应,账期支持! |
|||
GENERALSEMICONDUCTORVISHAY |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
GENERALSEMICONDUCTORVISHAY |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
GENERALSEMICONDUCTORVISHAY |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
VISHAY |
24+ |
TO-263 |
5000 |
全新原装正品,现货销售 |
|||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
VISHAY |
24+ |
TO-263 |
8000 |
新到现货，只做全新原装正品 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VIS |
22+ |
TO-263AB |
6000 |
十年配单,只做原装 |
VB20150S规格书下载地址
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2019-3-12
DdatasheetPDF页码索引
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