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VB20100C价格
参考价格：￥5.6393
型号：VB20100C-E3/4W 品牌：Vishay 备注：这里有VB20100C多少钱，2025年最近7天走势，今日出价，今日竞价，VB20100C批发/采购报价，VB20100C行情走势销售排行榜，VB20100C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VB20100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s | VishayVishay Siliconix 威世威世科技公司 |   | |
VB20100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | |
VB20100C | Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter | ISC 无锡固电 | | |
VB20100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | |
VB20100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：164.31 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
VB20100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：151.62 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
VB20100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.11 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Schottky technology Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s | VishayVishay Siliconix 威世威世科技公司 | | ||
Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter | ISC 无锡固电 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 100V TO263 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.11 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.11 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Schottky technology 文件：100.99 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：散装 描述：DIODE ARRAY SCHOTTKY 100V TO263 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Trench MOS Schottky technology 文件：100.99 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.1 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
PRODUCT SPECIFICATION Cable/Wire stripperss | JOKARI | | ||
Capacitive Sensor Features ■M30 × 1.5 threaded barrel ■Plastic, PA12‐GF30 ■Fine adjustment via potentiometer ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection ■ATEX category II 2 G, Ex Zone 1 ■ATEX category II 1 D, Ex Zone 20 ■SIL 2 (Low Demand Mode) acc. to IEC 61508, PL | TURCKTurck, Inc. 图尔克德国图尔克集团公司 | | ||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features • Package Designed for Power Surface Mount Applications • Center−Tap Configuration | ONSEMI 安森美半导体 | | ||
ENGINEERS CUTTING TOOLS 文件：3.25271 Mbytes Page：24 Pages | PRESTO | | ||
INDUSTRIAL MICROWAVE GENERATORS 2450 MHZ 文件：240.25 Kbytes Page：4 Pages | MKS | |
VB20100C产品属性
- 类型
描述
- 型号
VB20100C
- 功能描述
肖特基二极管与整流器 20 Amp 100 Volt Dual TrenchMOS
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Vishay Semiconductor Diodes Di |
22+ |
TO263AB |
9000 |
原厂渠道,现货配单 |
|||
Vishay(威世) |
24+ |
N/A |
11800 |
可配单提供样品 |
|||
VISHAY/威世 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY(威世) |
24+ |
TO-263AB |
1471 |
特价优势库存质量保证稳定供货 |
|||
VISHAY(威世) |
24+ |
TO-263AB |
5627 |
百分百原装正品,可原型号开票 |
|||
VISHAY |
23+24 |
TO-263 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
VISHAY/威世 |
TO-263 |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
|||
VISHAY/威世 |
24+ |
TO-263 |
9600 |
原装现货,优势供应,支持实单! |
|||
VISHAY |
10+PBF |
TO-263 |
1300 |
现货 |
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VB20100C规格书下载地址
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2019-3-12
DdatasheetPDF页码索引
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