位置:首页 > IC中文资料第4667页 > VB2
VB2价格
参考价格:¥0.0000
型号:VB2 品牌:Russell 备注:这里有VB2多少钱,2024年最近7天走势,今日出价,今日竞价,VB2批发/采购报价,VB2行情走势销售排行榜,VB2报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIO | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIO | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Trench MOS Schottky technology UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmaximum10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJES | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Componentinacco | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Componentinacco | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Componentinacco | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Componentinacco | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIO | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIO | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,per JESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandin accordancetoWEEE2002/96/EC •Haloge | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High Voltage Trench MOS Barrier Schottky Rectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD2 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,per JESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandin accordancetoWEEE2002/96/EC •Haloge | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,per JESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandin accordancetoWEEE2002/96/EC •Haloge | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High Voltage Trench MOS Barrier Schottky Rectifier UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIO | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIO | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A UltraLowVF=0.59VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordanc | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Trench MOS Schottky technology UltraLowVF=0.59VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220ABa | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A UltraLowVF=0.59VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordanc | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A UltraLowVF=0.59VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordanc | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A UltraLowVF=0.57VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECand | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High efficiency operation FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A UltraLowVF=0.57VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECand | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A UltraLowVF=0.57VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECand | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Trench MOS Schottky technology UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier UltraLowVF=0.62VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier UltraLowVF=0.62VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier UltraLowVF=0.62VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnologyGen2 •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-2 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnologyGen2 •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-2 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIO | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIO | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 100-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •UltraLowOn-Resistance •SmallSize APPLICATIONS •ActiveClampCircuitsinDC/DCPowerSupplies | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 |
VB2产品属性
- 类型
描述
- 型号
VB2
- 功能描述
肖特基二极管与整流器 20 Amp 100 Volt Dual TrenchMOS
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY(威世) |
23+ |
TO-263AB |
5627 |
百分百原装正品,可原型号开票 |
|||
VISHAY |
2020+ |
TO-263 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY/威世 |
1926+ |
TO-263 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
IR |
22+ |
TO-263 |
88619 |
||||
VISHAY/威世 |
23+ |
TO-263 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
VISHAY |
396379 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
|||||
VISHAY/威世 |
2024+原装现货 |
TO-263 |
8950 |
BOM配单专家,发货快,价格低 |
|||
VISHAY-威世 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
VISHAY(威世) |
23+ |
TO-263AB |
1471 |
特价优势库存质量保证稳定供货 |
VB2规格书下载地址
VB2参数引脚图相关
- zigbee模块
- z120
- xtr105
- xl4001
- x86架构
- x606
- wm7
- wimax网络
- wcdma手机
- w5500
- w300
- w230
- w200
- vp5
- voip技术
- viper22a
- viper22
- viper12
- vip12a
- vga接口
- VB2470
- VB244
- VB2355
- VB2290A
- VB2290
- VB-2251
- VB-2241
- VB-2221
- VB-2211
- VB2211
- VB-2151
- VB-2141
- VB2140
- VB-2121
- VB2121
- VB-2111
- VB2103K
- VB2101K
- VB-20X
- VB20X
- VB20-2051
- VB20-2031
- VB20202G-M3/8W-CUTTAPE
- VB20202G-M3/8W
- VB20202G-M3/4W
- VB20202C-M3/8W-CUTTAPE
- VB20202C-M3/8W
- VB20202C-M3/4W
- VB20200G-E3/8W
- VB20200C-E3/8W
- VB20200C-E3/4W
- VB20150S-E3/8W
- VB20150C-E3/8W
- VB20150C-E3/4W
- VB20100S-E3/8W
- VB20100S-E3/4W
- VB20100C-E3/4W
- VB-20
- VB2.3/2/6
- VB2.3/2/15
- VB1695
- VB162KX
- VB162K
- VB-150X
- VB1435
- VB139920M77
- VB1330X
- VB1330
- VB-12TCU-E
- VB-12STCU-OH
- VB-12MCU-E
- VB-12MBU-E
- VB125SP
- VB125
- VB1240X
- VB1240B
- VB1240
- VB1218X
- VB1106K
- VB1102M
- VB1101M
- VB-10X
- VB1094-75
- VB10-2077
- VB10-2071
- VB10-2062
- VB10-2061
- VB10-2051
- VB10-2050
- VB10-2031
- VB10-2029
- VB10-2025
- VB10-2020
- VB10170C-E3/4W
- VB10150C-E3/4W
- VB-100X
- VB-100
- VB-10
- VB1.5/2/24
- VB1.5/2/18
VB2数据表相关新闻
VBPW34VR
VBPW34VR
2023-2-3VAWQ6-Q48-D15H
进口代理
2022-8-18VBE5415
VBE5415,TO-252,全新原装,门市自取或当天发货.
2022-6-25VBE2104N
VBE2104N,TO-252,P-Channel100V(D-S)MOSFET
2022-6-25VAS1260
VAS1260,全新.当天发货或门市自取,如需了解更多产品信息联系我们.零七五五.八二七三二二九一/零七五五,八五二七四六六二,企鹅:一一七四零五二三五三/一八五二三四六九零六.V:八七六八零五五八.
2021-6-17V962PBC-33LP
二三极管、连接器、模块、光耦、电容电阻、单片机、处理器、晶振、传感器、逻辑芯片、电源芯片、放大器、
2019-3-12
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80