型号 功能描述 生产厂家 企业 LOGO 操作
VB10150S

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

VishayVishay Siliconix

威世威世科技公司

VB10150S

High Voltage Trench MOS Barrier Schottky Rectifier

文件:156.49 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High efficiency operation

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

VishayVishay Siliconix

威世威世科技公司

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

ISC

无锡固电

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

VishayVishay Siliconix

威世威世科技公司

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

ISC

无锡固电

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICAT

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICAT

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:168.07 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:168.07 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:带盒(TB) 描述:DIODE SCHOTTKY 150V 10A TO263AB 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:168.07 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:168.07 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A

VishayVishay Siliconix

威世威世科技公司

Low forward voltage drop, low power losses

文件:86.94 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 10A 150V TO-263AB 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:77.25 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

AT9034 TRI

Description 8W LED Downlight w/Dimm Driver - 110Deg beam - Satin Chrome - TRI-CCT

ATOM

爱特姆

AT9012 TRI

Description 11W LED Downlight with Dimmable Driver - 90 degree beam - Satin Chrome - TRI - SER II

ATOM

爱特姆

AT9019

Description 170mm Downlight Extension Plate - Satin Chrome

ATOM

爱特姆

Nylon PCB Supports - Imperial Spacing

文件:113.77 Kbytes Page:1 Pages

Heyco

Heyco짰 Nylon PCB Supports - Imperial Spacing

文件:116.57 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

VB10150S产品属性

  • 类型

    描述

  • 型号

    VB10150S

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

更新时间:2025-11-26 11:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
VISHAY/威世
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VISHAY/威世
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
JINGDAO/晶导微
23+
GBU
69820
终端可以免费供样,支持BOM配单!
VISHAY
25+
TO-263
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
VISHAY
0926+
231
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY/威世
22+
TO-263
6000
十年配单,只做原装
VISHAY/威世
2022+
241
全新原装 货期两周
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VISHAY
23+
50000
全新原装正品现货,支持订货

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