High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

High Voltage Trench MOS Barrier Schottky Rectifier

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High efficiency operation

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Compo

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICAT

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICAT

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier

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High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.07 Kbytes Page：5 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：带盒（TB） 描述：DIODE SCHOTTKY 150V 10A TO263AB 分立半导体产品 二极管 - 整流器 - 单

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.07 Kbytes Page：5 Pages

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：168.07 Kbytes Page：5 Pages

Low forward voltage drop, low power losses

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High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 10A 150V TO-263AB 分立半导体产品 二极管 - 整流器 - 单

High-Voltage Trench MOS Barrier Schottky Rectifier

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MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) • 100 Tested for Load M

SCANSWITCH RECTIFIER 10 AMPERES 1500 VOLTS

For Use As A Damper Diode In High and Very High Resolution Monitors The MUR10150E is a state-of-the-art Power Rectifier specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performa

SCANSWITCH RECTIFIER 10 AMPERES 1500 VOLTS

For Use As A Damper Diode In High and Very High Resolution Monitors The MUR10150E is a state-of-the-art Power Rectifier specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performa

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

High voltage power Schottky rectifier Description Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. Features and benefits ■ HIgh junction temperature capability ■ Good trade off between leakage current and forward voltage drop ■ Low

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

High voltage power Schottky rectifier Description Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. Features and benefits ■ HIgh junction temperature capability ■ Good trade off between leakage current and forward voltage drop ■ Low