V8P10价格

参考价格:¥1.8347

型号:V8P10HM3/86A 品牌:Vishay Semiconductor Dio 备注:这里有V8P10多少钱,2025年最近7天走势,今日出价,今日竞价,V8P10批发/采购报价,V8P10行情走势销售排行榜,V8P10报价。
型号 功能描述 生产厂家 企业 LOGO 操作
V8P10

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

VishayVishay Siliconix

威世威世科技公司

V8P10

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:90.61 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

V8P10

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

V8P10

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:92.12 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

V8P10

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.466 V at IF = 4A

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:92.12 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:554.92 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:86.56 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-277,3-PowerDFN 包装:卷带(TR) 描述:DIODE SCHOTTKY 100V 8A TO277A 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:90.61 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:90.61 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-277,3-PowerDFN 包装:卷带(TR) 描述:DIODE SCHOTTKY 100V 8A TO277A 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:90.61 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:90.61 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:92.12 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:92.12 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:92.12 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:92.12 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:111.06 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

Fairchild

仙童半导体

100V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

Fairchild

仙童半导体

Heavy duty switches & pilot lights offer both variety and reliability Endures harsh environments

文件:13.85927 Mbytes Page:51 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel QFET짰 MOSFET -100 V, -8.0 A, 185 m廓

文件:1.23782 Mbytes Page:8 Pages

Fairchild

仙童半导体

P-Channel QFET짰 MOSFET -100 V, -8.0 A, 185 m廓

文件:1.23782 Mbytes Page:8 Pages

Fairchild

仙童半导体

V8P10产品属性

  • 类型

    描述

  • 型号

    V8P10

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

更新时间:2025-11-20 14:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
25+23+
TO-277A(S
23464
绝对原装正品全新进口深圳现货
VISHAY/威世
24+
TO-277A
54000
郑重承诺只做原装进口现货
VISHAY
24+
TO-277
8000
新到现货,只做全新原装正品
Vishay General Semiconductor -
25+
TO-277A(SMPC)
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
Vishay(威世)
2526+
SMPC(TO-277A)
50000
只做原装优势现货库存,渠道可追溯
VISHAY
17+
TO-277A
9
进口原装公司现货
VISHAY
24+
TO-277A
30000
市场最低 原装现货 假一罚百 可开原型号
VISHAY(威世)
24+
N/A
12980
原装正品现货支持实单
VISHAY/威世
23+
SMPC(T
8215
原厂原装
威世
22+
TO-277A
12245
现货,原厂原装假一罚十!

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