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V8P价格
参考价格：￥1.8347
型号：V8P10HM3/86A 品牌：Vishay Semiconductor Dio 备注：这里有V8P多少钱，2024年最近7天走势，今日出价，今日竞价，V8P批发/采购报价，V8P行情走势销售排行榜，V8P报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable - | VishayVishay Siliconix 威世科技威世科技半导体 |  |   | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefi | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefi | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotive | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotive | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotive | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotive | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotive | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotive | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotive | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotive | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiv | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiv | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinitionso | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinitionso | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotive | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotive | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotive | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotive | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinitionso | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinitionso | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefi | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefi | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/ | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/ | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/ | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/ | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/ | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/ | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/ | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/ | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/ | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/ | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：90.61 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：111.06 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：92.12 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：111.06 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：92.12 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier 文件：554.92 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：86.56 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：111.06 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：111.06 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR） 描述：DIODE SCHOTTKY 100V 8A TO277A 分立半导体产品 二极管 - 整流器 - 单 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division |  | | |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：90.61 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：90.61 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：111.06 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：111.06 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
V8P产品属性
- 类型
描述
- 型号
V8P
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
2016+ |
TO-277A |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
VISHAY/威世 |
22+ |
TO-277A |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY/威世 |
24+ |
TO-277A(SMPC) |
45000 |
热卖优势现货 |
|||
VISHAY/威世 |
22+ |
SMPC(TO-277A) |
6000 |
只做原装,假一赔十 |
|||
VISHAY/威世 |
22+ |
TO-277A(SMPC) |
354000 |
||||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
VISHAY/濞佷笘 |
22+ |
SMPC(TO-277A) |
3600 |
||||
VISHAY |
21+ |
SMPC(TO-2 |
12880 |
公司只做原装,诚信经营 |
|||
VISHAY/威世 |
新年份 |
TO-277A(SMPC) |
33200 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
|||
VISHAY/威世 |
2022+ |
SMPC(TO-277A) |
7600 |
原厂原装,假一罚十 |
V8P芯片相关品牌
V8P规格书下载地址
V8P参数引脚图相关
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- z120
- xtr105
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- x86架构
- x606
- wm7
- wimax网络
- wcdma手机
- w5500
- w300
- w230
- w200
- vp5
- voip技术
- viper22a
- viper22
- viper12
- vip12a
- vga接口
- V9MLA0603NH
- V9MLA0603H
- V9MLA0402NR
- V9MLA0402LNR
- V-9773-L
- V9582X-LP
- V9064B
- V9063B
- V900E
- V9000K8-B
- V9000
- V8ZT05P
- V8ZA2P
- V8ZA2
- V8ZA1P
- V8ZA1
- V8ZA05P
- V8ZA05
- V8RA8
- V8PAN50-M3/I
- V8PAN50
- V8PAL50-M3/I
- V8PAL50
- V8PAL45HM3/I
- V8PAL45
- V8P8-M3
- V8P8HM3
- V8P6-M3
- V8P6HM3
- V8P20
- V8P12
- V8P10-M3/87A
- V8P10-M3/86A-CUTTAPE
- V8P10-M3/86A
- V8P10HM3/86A
- V8P10
- V8K71
- V8D2UHNB-AAC00-000
- V8D2UHNB-00000-000
- V8D2B60B-00000-000
- V8D1S00B-AZC00-000
- V8D1S00B-00000-000
- V8D1A60B-AEC00-000
- V8CP22
- V8B1S00C-AZC00-000
- V8B1KPP1-00000-000
- V8910BK
- V8910
- V890-1AX1-A1
- V881BA60
- V8818V
- V8818Q
- V8818N
- V8813Y
- V8813X
- V8813W
- V85MLA1210NH
- V85MLA1210H
- V85AS00B-AZB00-000
- V8511Y
- V8511X
- V8511W
- V850E2
- V850E1
- V8508I
- V8508H
- V8508G
- V8508F
- V8508E
- V8508D
- V8508A
V8P数据表相关新闻
V5.5MLA0603H
V5.5MLA0603H，VARISTORV5.5MLA30A0603
2023-3-4V8PA10-M3/I
进口代理
2022-9-22V60DM100C-M3/I
V60DM100C-M3/I
2021-11-26VAS1260
VAS1260，全新.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一/零七五五，八五二七四六六二，企鹅:一一七四零五二三五三/一八五二三四六九零六.V:八七六八零五五八.
2021-6-17V7-6B19D8
V7-6B19D8，全新原装现货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.
2021-2-9V962PBC-33LP
二三极管、连接器、模块、光耦、电容电阻、单片机、处理器、晶振、传感器、逻辑芯片、电源芯片、放大器、
2019-3-12
DdatasheetPDF页码索引
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