128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64

Description The V826516B04S memory module is organized 16,777,216 x 64 bits in a 200 pin memory module. The 16M x 64 memory module uses 8 Mosel-Vitelic 8M x 16 DDR SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times ar

128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64

Description The V826516G04S memory module is organized 16,777,216 x 64 bits in a 200 pin memory module. The 16M x 64 memory module uses 8 Mosel-Vitelic 16M x 8 DDR SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times ar

2.5 VOLT 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE

Description The V826516K04S memory module is organized 16,777,216 x 64 bits in a 184 pin memory module. The 16M x 64 memory module uses 8 Mosel-Vitelic 16M x 8 DDR SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times ar

2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE

Description The V826532K04S memory module is organized 33,554,432 x 64 bits in a 184 pin memory module. The 32M x 64 memory module uses 16 Mosel-Vitelic 16M x 8 DDR SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times a

64 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 8M x 64

Description The V82658B04S memory module is organized 8,388,608 x 64 bits in a 200 pin memory module. The 8M x 64 memory module uses 4 Mosel-Vitelic 8M x 16 DDR SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times are r

2.5 VOLT 8M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE

Description The V82658J04S memory module is organized 8,388,608 x 64 bits in a 184 pin memory module. The 8M x 64 memory module uses 4 Mosel-Vitelic 8M x 16 DDR SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times are r

256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64

Description The V826632B24S memory module is organized 33,554,432 x 64 bits in a 200 pin memory module. The 32M x 64 memory module uses 8 Mosel-Vitelic 16M x 16 DDR SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times a

256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64

Description The V826632G24S memory module is organized 33,554,432 x 64 bits in a 200 pin memory module. The 32M x 64 memory module uses 8 Mosel-Vitelic 32M x 8 DDR SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times ar

2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE

Description The V826632K24S memory module is organized 33,554,432 x 64 bits in a 184 pin memory module. The 16M x 64 memory module uses 8 Mosel-Vitelic 32M x 8 DDR SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times ar

512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64

Description The V826664G24S memory module is organized 67,108,864 x 64 bits in a 200 pin memory module. The 64M x 64 memory module uses 16 MoselVitelic 32M x 8 DDR SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times ar

2.5 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE

Description The V826664K24S memory module is organized 67,108,864 x 64 bits in a 184 pin memory module. The 64M x 64 memory module uses 16 Mosel-Vitelic 32M x 8 DDR SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times a

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

High-Speed, Low-Power Dual Operational Amplifier

PRODUCT DESCRIPTION The AD826 is a dual, high speed voltage feedback op amp. It is ideal for use in applications which require unity gain stability and high output drive capability, such as buffering and cable driving. FEATURES High Speed: 50 MHz Unity Gain Bandwidth

High-Speed, Low-Power Dual Operational Amplifier

FEATURES High Speed: 50 MHz Unity Gain Bandwidth 350 V/
s Slew Rate 70 ns Settling Time to 0.01% Low Power: 7.5 mA Max Power Supply Current Per Amp Easy to Use: Drives Unlimited Capacitive Loads 50 mA Min Output Current Per Amplifier Specified for +5 V, 5 V and 15 V Operation 2.0

High-Speed, Low-Power Dual Operational Amplifier

PRODUCT DESCRIPTION The AD826 is a dual, high speed voltage feedback op amp. It is ideal for use in applications which require unity gain stability and high output drive capability, such as buffering and cable driving. FEATURES High Speed: 50 MHz Unity Gain Bandwidth

Low Cost, 8W DIP Wide Input Range DC/DC Converters

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