Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 10 A

分立 ·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation;

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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封装/外壳：TO-3P-3 整包 包装：散装 描述：DIODE ARRAY SCHOTTKY 100V TO3PW 分立半导体产品 二极管 - 整流器 - 阵列

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：84.73 Kbytes Page：4 Pages

封装/外壳：TO-3P-3 整包 包装：管件 描述：DIODE ARRAY SCHOTTKY TO3PW 分立半导体产品 二极管 - 整流器 - 阵列

80 Amp Rectifier 60 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

Surface Mount Voltage Controlled Oscillator EGSM 920 - 960 MHz

Description The MLO80100-01020 is a fundamental single ended oscillator designed for use in cost sensitive wireless and telemetry applications. The device has been optimised by careful selection of the bipolar transistor and varactor diode for low phase noise and highly linear tuning characterist

80A, 1000V Ultrafast Diode

The RURG80100 is an ultrafast diode with soft recovery characteristics (trr

80A, 1000V Ultrafast Diode

The RURG80100 is an ultrafast diode with soft recovery characteristics (trr

80A, 1000V Ultrafast Diode

The RURU80100 is an ultrafast diode with soft recovery characteristics (trr