位置:首页 > IC中文资料 > V423-TM

型号 功能描述 生产厂家 企业 LOGO 操作
V423-TM

NEC LCD 42 Large Format Display

文件:1.09909 Mbytes Page:2 Pages

NEC

瑞萨

AM band-switching diode

DESCRIPTION Planar band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω. APPLICATION • Band switch

PHILIPS

飞利浦

AM band-switching diode

DESCRIPTION Leadless diode in a hermetically-sealed glass SOD80C SMD package with lead/tin plated metal discs at each end. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω

PHILIPS

飞利浦

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

MOTOROLA

摩托罗拉

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

ONSEMI

安森美半导体

POWER TRANSISTOR NPN SILICON

High-Voltage NPN Silicon Transistor . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc • Gain Specified to 3.5 Amp • High Frequency Response to 2.5 MHz

ONSEMI

安森美半导体

V423-TM数据表相关新闻

  • V5.5MLA0603H

    V5.5MLA0603H,VARISTOR V5.5MLA 30A 0603

    2023-3-4
  • V42254-B2235-C963

    V42254-B2235-C963

    2022-6-16
  • V42254-B2235-C488

    V42254-B2235-C488

    2022-6-16
  • V42254-B2240-M780

    V42254-B2240-M780

    2022-6-16
  • V60DM100C-M3/I

    V60DM100C-M3/I

    2021-11-26
  • V4555

    类型 衬垫 形状 圆形 应用 通用 - 轴向,径向 材料 聚丙烯 颜色 - 特性 - 长度 - 宽度 - 高度 0.098(2.49mm) 直径 - 外部 0.362(9.20mm) 直径 - 内部 0.200(5.08mm)

    2020-12-15