10 Amp NPN Silicon Power Transistors 125W

Features • High Collector-Emitter Voltage VCES=400V • DC Current Gain Specified 3.5A • High Frequency Response to 2.5 MHz

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min.) ·DC Current Gain- : hFE= 30-90@ IC= 1A APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits.

10 Amp NPN Silicon Power Transistors 125W

Features • High Collector-Emitter Voltage VCEs=400V • DC Current Gain Specified 3.5A • High Frequency Response to 2.5MHz

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage APPLICATIONS ·Designed for medium-to-high voltage Inverters,converters,regulators and switching circuits

POWER TRANSISTOR NPN SILICON

High-Voltage NPN Silicon Transistor . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc • Gain Specified to 3.5 Amp • High Frequency Response to 2.5 MHz

Silicon NPN Power Transistors

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POWER TRANSISTOR NPN SILICON

Silicon NPN Transistor

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Silicon NPN Transistor

文件：149.33 Kbytes Page：1 Pages

AM band-switching diode

DESCRIPTION Planar band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω. APPLICATION • Band switch

AM band-switching diode

DESCRIPTION Leadless diode in a hermetically-sealed glass SOD80C SMD package with lead/tin plated metal discs at each end. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon