Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

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Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.31 V at IF = 5.0 A

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.31 V at IF = 5.0 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.31 V at IF = 5.0 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：卷带（TR） 描述：40A 60V SMPD TRENCH SKY RECT 分立半导体产品 二极管 - 整流器 - 阵列

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：116.45 Kbytes Page：5 Pages

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：116.45 Kbytes Page：5 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：40A 60V SMPD TRENCH SKY RECT 分立半导体产品 二极管 - 整流器 - 阵列

POWER MODULES DIODE

Description The B40J../B40C../B40D.. series of B-modules use power diodes in half0bridge configuration. The semiconductors are electrically isolated from the metal base allowing common heatsink and compact assemblies to be built. They can be interconnected to form single or three phase bridges.

SCHOTTKY BARRIER RECTIFIERS(40A,30-60V)

Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideallysuited for lowvoltage, high frequencyrectification, or as free wheeling and polarityprotection diodes.

40A DUAL SCHOTTKY BARRIER RECTIFIER

Features  Schottky Barrier Chip  Guard Ring for Transient Protection  Low Forward Voltage Drop  Low Power Loss, High Efficiency  High Surge Current Capability  Epoxy Meets UL 94V-0 Classification  Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

Schottky Barrier Rectifiers

SCHOTTKY BARRIER RECTIFIERS 40 AMPERES 30-60 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectificati

Switchmode Dual Schottky Barrier Power Rectifiers

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