型号 功能描述 生产厂家 企业 LOGO 操作
V40150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

文件:168.66 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

V40150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:130.46 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

V40150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.16 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

V40150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:158.4 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

V40150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier5

文件:163.73 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

V40150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.73 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

V40150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.16 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:130.46 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.73 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier5

文件:163.73 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:133.51 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:158.4 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Low forward voltage drop, low power losses

文件:157.16 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

VishayVishay Siliconix

威世科技

肖特基二极管与整流器 40 Amp 150 Volt Dual TrenchMOS

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

文件:168.66 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.73 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.16 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier5

文件:163.73 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.73 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

文件:168.66 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 40A 150V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:130.46 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 150V TO220 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:130.46 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Toroidal Surface Mount Inductors

DESCRIPTION The 4000 series is a range of surface mount toroidal inductors designed for use in switching power supplies and DC/DC converters. The parts are ideal for applications requiring low profile compact components in a surface mount package. FEATURES ■ 3.3µH to 330µH ■ Surface Mounting

CANDD

Toroidal Surface Mount Inductors

文件:103.84 Kbytes Page:2 Pages

MuRata

村田

High frequency operation

文件:712.04 Kbytes Page:3 Pages

Littelfuse

力特

Cable assembly with T812 series connector w/SR

文件:169.93 Kbytes Page:1 Pages

AMPHENOLCS

安费诺

40Amp Schottky Barrier Rectifier

文件:147.51 Kbytes Page:2 Pages

Microsemi

美高森美

V40150C产品属性

  • 类型

    描述

  • 型号

    V40150C

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

更新时间:2025-10-4 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY SEMICONDUCTOR
25+
SMD
918000
明嘉莱只做原装正品现货
GENERALSEMICONDUCTORVISHAY
21+
NA
12820
只做原装,质量保证
VISHAY/威世
24+
6000
只做原厂渠道 可追溯货源
GENERALSEMICONDUCTORVISHAY
24+
NA
43250
郑重承诺只做原装进口现货
VISHAYHONGKONGLIMITED
24+
786
GENERALSEMICONDUCTORVISHAY
23+
NA
12730
原装正品代理渠道价格优势
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VIS
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
Vishay(威世)
18+
9800
代理进口原装/实单价格可谈
VISHAY/威世
23+
TO-220
6000
原装正品,支持实单

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