位置：首页 > IC中文资料第11366页 > V40150C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V40150C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 |   | |
V40150C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A 文件：168.66 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V40150C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.46 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V40150C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.16 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V40150C | Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：158.4 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V40150C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier5 文件：163.73 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V40150C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.73 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A 分立 ·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.16 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.46 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.73 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier5 文件：163.73 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：133.51 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：158.4 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Low forward voltage drop, low power losses 文件：157.16 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A 文件：168.66 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.73 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
肖特基二极管与整流器 40 Amp 150 Volt Dual TrenchMOS | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.16 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier5 文件：163.73 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.73 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A 文件：168.66 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 40A 150V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.46 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 150V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.46 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Toroidal Surface Mount Inductors DESCRIPTION The 4000 series is a range of surface mount toroidal inductors designed for use in switching power supplies and DC/DC converters. The parts are ideal for applications requiring low profile compact components in a surface mount package. FEATURES ■ 3.3µH to 330µH ■ Surface Mounting | CANDD | | ||
MBRB40150CT SCHOTTKY RECTIFIER Features 150℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free | SMCDIODE 桑德斯微电子 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION Dual center tap Schottky rectifiers suited for high frequency switch mode power supply. Packaged in TO-247, TO-220AB and D2PAK, this devices is intended for use to enhance the reliability of the application. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION Dual center tap Schottky rectifiers suited for high frequency switch mode power supply. Packaged in TO-247, TO-220AB and D2PAK, this devices is intended for use to enhance the reliability of the application. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION Dual center tap Schottky rectifiers suited for high frequency switch mode power supply. Packaged in TO-247, TO-220AB and D2PAK, this devices is intended for use to enhance the reliability of the application. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY | STMICROELECTRONICS 意法半导体 | |
V40150C产品属性
- 类型
描述
- 型号
V40150C
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
18+ |
9800 |
代理进口原装/实单价格可谈 |
||||
VIS |
25+ |
TO-220 |
30000 |
代理全新原装现货,价格优势 |
|||
VISHAY/威世 |
25+ |
TO-220 |
15000 |
本公司 只做全新原装正品 |
|||
VISHAY/威世 |
2540+ |
8595 |
只做原装正品假一赔十为客户做到零风险!! |
||||
VISHAY/威世 |
25+ |
TO-220AB |
12700 |
买原装认准中赛美 |
|||
VISHAY |
23+ |
TO220 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
GENERALSEMICONDUCTORVISHAY |
21+ |
NA |
1000 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
GENERALSEMICONDUCTORVISHAY |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
VIS |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY/威世 |
25+ |
TO220 |
20300 |
VISHAY/威世原装特价V40150C即刻询购立享优惠#长期有货 |
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V40150C规格书下载地址
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DdatasheetPDF页码索引
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