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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V30M100M-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VishayVishay Siliconix 威世威世科技公司 |   | |
V30M100M-E3 | Low forward voltage drop, low power losses 文件：99.82 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
V30M100M-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：管件 描述：DIODE SCHOTTKY 15A 100V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：88.02 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
23+ |
N/A |
11800 |
||||
VISHAY/威世 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY |
22+ |
SMD |
29000 |
||||
VISHAY/威世 |
24+ |
NA/ |
3537 |
原厂直销,现货供应,账期支持! |
|||
VISHAY |
/ |
TO-220 |
25 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Vishay Semiconductor Diodes Di |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
|||
VISHAY原装 |
25+23+ |
TO-220 |
22350 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VIS |
25+ |
TO-TO-220AB |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY原装 |
24+ |
TO-220 |
30980 |
原装现货/放心购买 |
V30M100M-E3规格书下载地址
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DdatasheetPDF页码索引
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