| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V30K60 | High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.3 V at IF = 5 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 |   | |
V30K60 | High Current Density Surface-Mount (TMBS짰) Trench MOS Barrier Schottky Rectifier 文件：169.68 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.3 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.3 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.3 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.3 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface-Mount (TMBS짰) Trench MOS Barrier Schottky Rectifier 文件：169.68 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface-Mount (TMBS짰) Trench MOS Barrier Schottky Rectifier 文件：169.68 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：8-PowerTDFN 包装：管件 描述：30A, 60V, FLATPAK 5X6 SINGLE TRE 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
封装/外壳：8-PowerTDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：30A, 60V, FLATPAK 5X6 SINGLE TRE 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High Current Density Surface-Mount (TMBS짰) Trench MOS Barrier Schottky Rectifier 文件：169.68 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface-Mount (TMBS짰) Trench MOS Barrier Schottky Rectifier 文件：169.68 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SOLID-STATE FREQUENCY CONVERTERS 文件：537.87 Kbytes Page：2 Pages | NOVA | | ||
Fast Recovery Diode 文件：163.17 Kbytes Page：4 Pages | SHINDENGEN | | ||
30Amperes,600Volts Single Fast Recovery Epitaxial Diode 文件：1.32739 Mbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
Fast Recovery Diode 文件：226.24 Kbytes Page：4 Pages | SHINDENGEN | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
26+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
V30K60规格书下载地址
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DdatasheetPDF页码索引
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