V30DL45价格
参考价格：￥2.6996
型号：V30DL45BP-M3/I 品牌：Vishay Semiconductors 备注：这里有V30DL45多少钱，2025年最近7天走势，今日出价，今日竞价，V30DL45批发/采购报价，V30DL45行情走势销售排行榜，V30DL45报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V30DL45 | Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A | VishayVishay Siliconix 威世科技 |   | |
V30DL45 | Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：122.5 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | |
V30DL45 | Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.28 V at IF = 5 A | VishayVishay Siliconix 威世科技 | | |
Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A | VishayVishay Siliconix 威世科技 | | ||
TMBS짰 (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi | VishayVishay Siliconix 威世科技 | | ||
TMBS짰 (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi | VishayVishay Siliconix 威世科技 | | ||
Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.28 V at IF = 5 A • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive | VishayVishay Siliconix 威世科技 | | ||
Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.28 V at IF = 5 A • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive | VishayVishay Siliconix 威世科技 | | ||
Trench MOS Barrier Schottky Rectifier 文件：122.64 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | ||
TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5A | VishayVishay Siliconix 威世科技 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：115.54 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：125.39 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：122.5 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：管件 描述：DIODE SCHOTTKY 45V 30A TO263AC 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：125.39 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5 A | VishayVishay Siliconix 威世科技 | | ||
Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：122.5 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 45V 30A TO263AC 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：114.86 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
39250 |
原装现货,当天可交货,原型号开票 |
|||
VISHAY/威世 |
25+ |
TO262 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
VISHAY/威世 |
22+ |
100000 |
代理渠道/只做原装/可含税 |
||||
VISHAY/威世 |
24+ |
TO262 |
990000 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
24+ |
19+ |
37279 |
郑重承诺只做原装进口现货 |
|||
Vishay General Semiconductor - |
25+ |
TO-263AC(SMPD) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
Vishay Semiconductor Diodes Di |
23+ |
SMPD |
9000 |
原装正品，支持实单 |
|||
Vishay Semiconductor Diodes Di |
23+ |
SMPD |
8000 |
只做原装现货 |
|||
Vishay(威世) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
V30DL45规格书下载地址
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DdatasheetPDF页码索引
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