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V30150C价格
参考价格：￥5.3701
型号：V30150C-E3/4W 品牌：Vishay 备注：这里有V30150C多少钱，2026年最近7天走势，今日出价，今日竞价，V30150C批发/采购报价，V30150C行情走势销售排行榜，V30150C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V30150C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A Ultra Low VF = 0.56 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, | VISHAYVishay Siliconix 威世威世科技公司 |   | |
V30150C | Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a | VISHAYVishay Siliconix 威世威世科技公司 | | |
V30150C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A | VISHAYVishay Siliconix 威世威世科技公司 | | |
V30150C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.6 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V30150C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：169.29 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V30150C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.63 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A Ultra Low VF = 0.56 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A Ultra Low VF = 0.56 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.63 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：169.29 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.6 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：148.99 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：159.93 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：169.29 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.6 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：169.29 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30A 150V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.63 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 150V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.63 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY ■ GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP ■ LOW LEAKAGE CURRENT ■ INSULATED PACKAGE: TO-220FPAB | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY ■ GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP ■ LOW LEAKAGE CURRENT ■ INSULATED PACKAGE: TO-220FPAB | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY ■ GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP ■ LOW LEAKAGE CURRENT ■ INSULATED PACKAGE: TO-220FPAB | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY ■ GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP ■ LOW LEAKAGE CURRENT ■ INSULATED PACKAGE: TO-220FPAB | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY ■ GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP ■ LOW LEAKAGE CURRENT ■ INSULATED PACKAGE: TO-220FPAB | STMICROELECTRONICS 意法半导体 | |
V30150C产品属性
- 类型
描述
- 型号
V30150C
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
TO-220 |
12000 |
原装正品真实现货杜绝虚假 |
|||
VISHAY/威世 |
24+ |
TO-220AB |
6000 |
全新原装深圳仓库现货有单必成 |
|||
VISHAY/威世 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY |
23+24 |
TO220AB |
59340 |
原装正品,原盘原标,优势库存 |
|||
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY/威世 |
25+ |
TO-220 |
32360 |
VISHAY/威世全新特价V30150C-E3/4W即刻询购立享优惠#长期有货 |
|||
VISHAY/威世 |
22+ |
TO-220-3 |
12245 |
现货,原厂原装假一罚十! |
|||
VISHAY |
18+ |
3000 |
TO-220-3 |
||||
VISHAY/威世 |
23+ |
TO-220-3 |
9000 |
原装正品假一罚百!可开增票! |
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V30150C规格书下载地址
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