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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
V30150C-E3SLASH4W | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A Ultra Low VF = 0.56 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
V30150C-E3SLASH4W | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：169.29 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A Ultra Low VF = 0.56 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：169.29 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：169.29 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
TO-220 |
42000 |
只做原装进口现货 |
|||
VISHAY/威世 |
24+ |
NA/ |
5230 |
原装现货,当天可交货,原型号开票 |
|||
VISHAY |
24+ |
SOP8 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
VISHAY |
24+ |
SOP-8 |
3000 |
||||
2023+ |
5800 |
进口原装,现货热卖 |
|||||
2023+ |
55000 |
进口原装现货 |
|||||
Vishay(威世) |
23+ |
N/A |
11800 |
||||
Vishay Semiconductor Diodes Di |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
|||
VISHAY/威世 |
1926+ |
TO-2473P |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
VISHAY |
23+ |
TO-220AB |
30000 |
代理全新原装现货,价格优势 |
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DdatasheetPDF页码索引
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