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V30120SG价格
参考价格：￥4.9189
型号：V30120SG-E3/4W 品牌：Vishay 备注：这里有V30120SG多少钱，2025年最近7天走势，今日出价，今日竞价，V30120SG批发/采购报价，V30120SG行情走势销售排行榜，V30120SG报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
V30120SG | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
V30120SG | High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | |
V30120SG | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：158.13 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
V30120SG | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：154.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Low forward voltage drop, low power losses High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：154.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：124.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：158.13 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：154.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE SCHOTTKY 30A 120V TO-220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE SCHOTTKY 30A 120V TO-220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
PRODUCT SPECIFICATION Cable/Wire stripperss | JOKARI | | ||
Schottky PowerMod ● Schottky Barrier Rectifier ● Guard Ring Protection ● Common Cathode Center Tap ● 300 Amperes/45 Volts ● 125°C Junction Temperature ● Reverse Energy Tested ● VRRM 20 - 45 Volts ● ROHS Compliant | Microsemi 美高森美 | | ||
PRODUCT SPECIFICATION 文件：395.81 Kbytes Page：6 Pages | JOKARI | | ||
BNC FEEDTHROUGH CONNECTORS 文件：341.09 Kbytes Page：2 Pages | CLIFF | | ||
0.3 Inch Single Digit SMD Display 文件：240.28 Kbytes Page：7 Pages | CHINASEMI | |
V30120SG产品属性
- 类型
描述
- 型号
V30120SG
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
1822+ |
TO-220 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
VISHAY |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY/威世 |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY |
23+ |
TO220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
VISHAY |
24+ |
TO220 |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ALPS |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
FERRAZ/罗兰熔断器 |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
VISHAY |
0644+ |
TO220 |
130 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
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V30120SG规格书下载地址
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