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V30120S价格
参考价格：￥4.9189
型号：V30120SG-E3/4W 品牌：Vishay 备注：这里有V30120S多少钱，2025年最近7天走势，今日出价，今日竞价，V30120S批发/采购报价，V30120S行情走势销售排行榜，V30120S报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
V30120S | High-Voltage Trench MOS Barrier Schottky Rectifier High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
V30120S | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | |
V30120S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.419 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
V30120S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.9 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Low forward voltage drop, low power losses High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件：165.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.419 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.9 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：131.94 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：731.92 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：731.92 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.43 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.9 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件：165.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：TO-220-3 包装：管件 描述：DIODE SCHOTTKY 120V 30A TO220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High Voltage Trench MOS Barrier Schottky Rectifier 文件：726.92 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.43 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件：165.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.9 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.43 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：158.13 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：154.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：154.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：124.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：158.13 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 120V 30A TO220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：154.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.419 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.419 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
PRODUCT SPECIFICATION Cable/Wire stripperss | JOKARI | | ||
Schottky PowerMod ● Schottky Barrier Rectifier ● Guard Ring Protection ● Common Cathode Center Tap ● 300 Amperes/45 Volts ● 125°C Junction Temperature ● Reverse Energy Tested ● VRRM 20 - 45 Volts ● ROHS Compliant | Microsemi 美高森美 | | ||
PRODUCT SPECIFICATION 文件：395.81 Kbytes Page：6 Pages | JOKARI | | ||
BNC FEEDTHROUGH CONNECTORS 文件：341.09 Kbytes Page：2 Pages | CLIFF | | ||
0.3 Inch Single Digit SMD Display 文件：240.28 Kbytes Page：7 Pages | CHINASEMI | |
V30120S产品属性
- 类型
描述
- 型号
V30120S
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay/GeneralSemiconduc |
24+ |
TO-220AB |
1495 |
||||
VISHAY |
24+ |
TO220 |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
|||
VISHAY/威世 |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
VISHAY/威世 |
25+ |
TO-220 |
32000 |
VISHAY/威世全新特价V30120S-E3/45即刻询购立享优惠#长期有货 |
|||
VISHAY |
1932+ |
TO-220 |
265 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
|||
VISHAY |
21+ |
TO-220 |
11960 |
原装现货假一赔十 |
|||
VISHAY |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
V30120S规格书下载地址
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