型号 功能描述 生产厂家 企业 LOGO 操作
V29C51002B

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

V29C51002B

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

MOSEL

茂矽电子

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY

MOSEL

茂矽电子

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

V29C51002B产品属性

  • 类型

    描述

  • 型号

    V29C51002B

  • 制造商

    MOSEL

  • 制造商全称

    MOSEL

  • 功能描述

    2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

更新时间:2025-10-31 14:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Syncmos
25+
PLCC32
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
MOSEL
0404+
TSOP32
61
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MOSEL
00+
PLCC
140
原装现货海量库存欢迎咨询
MOSEL-V
24+
PLCC-32
3000
自己现货
Cypress
22+
64FBGA (11x13)
9000
原厂渠道,现货配单
N/A
2450+
DIP32
6540
只做原装正品现货或订货!终端客户免费申请样品!
Cypress Semiconductor Corp
21+
100-LBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
MOSEL
23+
TSOP32
50000
全新原装正品现货,支持订货
MOSEL
2016+
DIP
1800
只做原装,假一罚十,公司可开17%增值税发票!
VC
23+
DIP
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO

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