型号 功能描述 生产厂家 企业 LOGO 操作
V29C51002B

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

V29C51002B

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

MOSEL

茂矽电子

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY

MOSEL

茂矽电子

2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10

MOSEL

茂矽电子

V29C51002B产品属性

  • 类型

    描述

  • 型号

    V29C51002B

  • 制造商

    MOSEL

  • 制造商全称

    MOSEL

  • 功能描述

    2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

更新时间:2025-12-30 10:40:00
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原装现货海量库存欢迎咨询
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