位置：首页 > IC中文资料第12824页 > V29C51002B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V29C51002B | 2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10 | MOSEL 茂矽电子 |   | |
V29C51002B | 2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY | MOSEL 茂矽电子 | | |
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10 | MOSEL 茂矽电子 | | ||
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10 | MOSEL 茂矽电子 | | ||
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10 | MOSEL 茂矽电子 | | ||
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10 | MOSEL 茂矽电子 | | ||
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10 | MOSEL 茂矽电子 | | ||
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10 | MOSEL 茂矽电子 | | ||
2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY | MOSEL 茂矽电子 | | ||
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features ■256Kx8-bit Organization ■Address Access Time: 55, 90 ns ■Single 5V ±10 Power Supply ■Sector Erase Mode Operation ■16KB Boot Block (lockable) ■512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 20µs (Max) ■Minimum 10 | MOSEL 茂矽电子 | |
V29C51002B产品属性
- 类型
描述
- 型号
V29C51002B
- 制造商
MOSEL
- 制造商全称
MOSEL
- 功能描述
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
2450+ |
DIP32 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
Cypress |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
MOSEL |
25+23+ |
DIP-28 |
37933 |
绝对原装正品全新进口深圳现货 |
|||
MOSEL-V |
24+ |
PLCC-32 |
3000 |
自己现货 |
|||
MOSEL |
00+ |
PLCC |
140 |
原装现货海量库存欢迎咨询 |
|||
Cypress Semiconductor Corp |
21+ |
100-LBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
Cypress |
22+ |
64FBGA (11x13) |
9000 |
原厂渠道,现货配单 |
|||
Syncmos |
25+ |
PLCC32 |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
AMD |
2023+ |
PLCC |
50000 |
原装现货 |
|||
MOSEL |
2447 |
TSOP32 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
V29C51002B规格书下载地址
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DdatasheetPDF页码索引
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