High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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Low forward voltage drop, low power losses

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High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.29 V at IF = 5 A

封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 60V 5.5A TO277A 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-277，3-PowerDFN 包装：管件 描述：DIODE SCHOTTKY 60V 5.5A TO277A 分立半导体产品 二极管 - 整流器 - 单