Dual TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak M3 of 260 °C • AEC-Q101 qualified available:

Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.55 V at IF = 5 A

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified a

Dual Trench MOS Barrier Schottky Rectifier

文件：101.83 Kbytes Page：6 Pages

Dual Trench MOS Barrier Schottky Rectifier

封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：卷带（TR） 描述：DIODE SCHOTTKY 120V 10A SMPD 分立半导体产品 二极管 - 整流器 - 阵列

Dual Trench MOS Barrier Schottky Rectifier

文件：101.83 Kbytes Page：6 Pages

Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 120V SMPD 分立半导体产品 二极管 - 整流器 - 阵列