High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi

15 Ampere,50 Volt Trench Process Low Vf Schottky Barrier Rectifier

Features Low forward voltage drop ThinkiSemi matured trench barrier schottky High current capability High surge current capability Low reverse leakage current Application Inverter/UPS/Converter/BMS Photovoltaic Solar Cell Protection/SMPS Battery Reverse Protection Circuit/Charger

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi

Trench MOS Barrier Schottky Rectifier

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封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 50V 15A TO277A 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-277，3-PowerDFN 包装：管件 描述：DIODE SCHOTTKY 50V 15A TO277A 分立半导体产品 二极管 - 整流器 - 单