| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V15P15 | High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - | VishayVishay Siliconix 威世威世科技公司 |   | |
V15P15 | High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：106.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
V15P15 | High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 5 A • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 5 A • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 5 A • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 5 A • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：78.61 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：106.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：106.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR） 描述：DIODE SCHOTTKY 150V 15A TO277A 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：106.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 150V 15A TO277A 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：106.07 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：100.21 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：101.76 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：105.37 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
24+ |
TO277 |
42000 |
只做原装进口现货 |
|||
VISHAY |
2022+PB |
TO-277A |
1400 |
||||
VISHAY/威世 |
24+ |
NA/ |
13550 |
原装现货,当天可交货,原型号开票 |
|||
VISHAY/威世 |
25+ |
TO-277A |
48211 |
VISHAY/威世全新特价V15P15-M3/H即刻询购立享优惠#长期有货 |
|||
VISHAY |
25+23+ |
TO277A(SMPC) |
32378 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
新年份 |
TO-277A |
1400 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
|||
VISHAY |
16+ |
TO-277A(SMPC) |
33200 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
|||
VISHAY/威世 |
23+ |
TO-277A |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY |
24+ |
10300 |
原装现货假一赔十 |
||||
VISHAY/威世 |
2450+ |
TO-277A |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
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V15P15数据表相关新闻
V23047-A1024-A511
V23047-A1024-A511
2023-4-7UZ1086G-SOT223R-AD-TG_UTC代理商
UZ1086G-SOT223R-AD-TG_UTC代理商
2023-3-14UXN40M7K
UXN40M7K
2021-10-20UXN40M7K
UXN40M7K
2021-10-20V15PM15-M3/H
V15PM15-M3/H
2020-11-20V23079-A1006-B201
V23079-A1006-B201，全新原装当天发货或门市自取0755-82732291.
2019-8-31
DdatasheetPDF页码索引
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