型号 功能描述 生产厂家 企业 LOGO 操作
V12P22

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:106.96 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

V12P22

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at IF = 6 A

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at IF = 6 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.33 V at IF = 6 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at IF = 6 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.33 V at IF = 6 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at IF = 6 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.33 V at IF = 6 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at IF = 6 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.33 V at IF = 6 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:106.96 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:104.1 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:106.96 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:104.1 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-277,3-PowerDFN 包装:卷带(TR) 描述:12A, 200V, SMPC TRENCH SKY RECT. 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

封装/外壳:TO-277,3-PowerDFN 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:12A, 200V, SMPC TRENCH SKY RECT. 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:106.96 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:104.1 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:106.96 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:104.1 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual Output Plug-in Signal Conditioners W-UNIT

文件:122.21 Kbytes Page:4 Pages

MSYSTEM

爱模

Dual Output Plug-in Signal Conditioners W-UNIT

文件:122.21 Kbytes Page:4 Pages

MSYSTEM

爱模

Dual Output Plug-in Signal Conditioners W-UNIT

文件:122.21 Kbytes Page:4 Pages

MSYSTEM

爱模

Dual Output Plug-in Signal Conditioners W-UNIT

文件:122.21 Kbytes Page:4 Pages

MSYSTEM

爱模

更新时间:2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
24+
NA/
4750
原装现货,当天可交货,原型号开票
VISHAY/威世
22+
TO-277A
20000
只做原装
VISHAY
TO-277A
1500
一级代理 原装正品假一罚十价格优势长期供货
VISHAY/威世
21+
TO-277A
1975
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VISHAY/威世
21+
2019PB
880000
明嘉莱只做原装正品现货
VISHAY/威世
23+
TO-277A
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VISHAY
2025+
TO-277A
7695
全新原厂原装产品、公司现货销售
VISHAY/威世
24+
TO-277A
66500
只做全新原装进口现货
VISHAY/威世
2223+
TO-277A
26800
只做原装正品假一赔十为客户做到零风险

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