位置：首页 > IC中文资料第7392页 > V10P10HE3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V10P10HE3 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses • | VISHAYVishay Siliconix 威世威世科技公司 |   | |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses • | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses • | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses • | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses • | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses • | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses • | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-277，3-PowerDFN 包装：散装 描述：DIODE SCHOTTKY 100V 10A TO277A 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR） 描述：DIODE SCHOTTKY 100V 10A TO277A 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | |
V10P10HE3产品属性
- 类型
描述
- 型号
V10P10HE3
- 功能描述
肖特基二极管与整流器 10 Amp 100 Volt Single TrenchMOS
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NSC |
26+ |
SO-8 |
9823 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ALLWINNER/全志 |
26+ |
BGA-609 |
5000 |
ALLWINNE原厂支持只做自己现货 |
|||
COOLAUD |
22+ |
SOP16 |
20000 |
公司只做原装 品质保证 |
|||
LITTELFUSE/力特 |
25+ |
DIP |
88000 |
全新原装正品现货价格优势可拆样 |
|||
24+ |
3000 |
自己现货 |
|||||
LITTLEFUSE |
24+ |
原厂原装 |
5000 |
原装正品 |
|||
COOLAUD |
25+ |
SOP16 |
1000 |
全新原装正品支持含税 |
|||
KEMET |
25+ |
N/A |
12369 |
样件支持,可原厂排单订货! |
|||
renditio |
16+ |
QFP |
1052 |
进口原装现货/价格优势! |
|||
LITTELFUSE/力特 |
2447 |
PPAK |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
V10P10HE3芯片相关品牌
V10P10HE3规格书下载地址
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V10P10HE3数据表相关新闻
V23047-A1024-A511
V23047-A1024-A511
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2020-11-20V23079-A1006-B201
V23079-A1006-B201，全新原装当天发货或门市自取0755-82732291.
2019-8-31
DdatasheetPDF页码索引
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