型号 功能描述 生产厂家 企业 LOGO 操作
V10P10HE3

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-277,3-PowerDFN 包装:散装 描述:DIODE SCHOTTKY 100V 10A TO277A 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

封装/外壳:TO-277,3-PowerDFN 包装:卷带(TR) 描述:DIODE SCHOTTKY 100V 10A TO277A 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

V10P10HE3产品属性

  • 类型

    描述

  • 型号

    V10P10HE3

  • 功能描述

    肖特基二极管与整流器 10 Amp 100 Volt Single TrenchMOS

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2025-11-20 16:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
24+
10300
原装现货假一赔十
VISHAY/威世
24+
TO277A
27950
郑重承诺只做原装进口现货
原装VISHAY
25+23+
SMD-TO227A
43097
绝对原装正品全新进口深圳现货
VISHAY/威世
2450+
TO277A
8850
只做原装正品假一赔十为客户做到零风险!!
VISHAY
2025+
TO-277A(SMPC)
7695
全新原厂原装产品、公司现货销售
VISHAY
16+
TO-277A(SMPC)
28000
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!
VISHAY/威世
24+
NA/
12250
原厂直销,现货供应,账期支持!
VISHAY/威世
20+
TO-277A(SMPC)
89680
现货很近!原厂很远!只做原装
VISHAY/威世
22+
SMD-TO227A
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
Vishay General Semiconductor -
25+
TO-277A(SMPC)
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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