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V10P10价格

参考价格：￥2.3115

型号：V10P10HM3/86A 品牌：Vishay 备注：这里有V10P10多少钱，2026年最近7天走势，今日出价，今日竞价，V10P10批发/采购报价，V10P10行情走势销售排行榜，V10P10报价。

型号	功能描述	生产厂家企业	LOGO
V10P10	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10	High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier Ultra Low FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10	High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.453 V at IF = 5 A 分立 Very low profile - typical height of 1.1 mm\nIdeal for automated placement\nTrench MOS Schottky technology;	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10	10 Ampere Lower VF Miniature Surface Mount Schottky Barrier Rectifier 文件：380.67 Kbytes Page：2 Pages	THINKISEMI 思祁半导体	THINKISEMI
V10P10	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：95.66 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10_V01	High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier Ultra Low FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-E3	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-E3/86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-E3/87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-E386A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-E387A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-E3SLASH86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-E3SLASH87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10HE3	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10HE3/86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10HE3/87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10HE386A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10HE387A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10HE3SLASH86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10HE3SLASH87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10HM3	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10HM3/86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10HM3/87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10HM386A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10HM387A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10HM3SLASH86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10HM3SLASH87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-M3	THINKI 10 Ampere,100 Volt Trench Process Low Vf Schottky Barrier Rectifier Features Low forward voltage drop ThinkiSemi matured trench barrier schottky High current capability High surge current capability Low reverse leakage current Application Inverter/Amplifier Photovoltaic Solar Cell Protection/SMPS Battery Reverse Protection Circuit/Charger	THINKISEMI 思祁半导体	THINKISEMI
V10P10-M3	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-M3/86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-M3/87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-M386A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-M387A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-M3SLASH86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-M3SLASH87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10_11	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：95.66 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10_15	MOS Barrier Schottky Rectifier Ultra Low 文件：539.52 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10_15	High Current Density Surface Mount MOS Barrier Schottky Rectifier Ultra Low 文件：549.88 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-E3/87A	封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR）描述：DIODE SCHOTTKY 100V 10A TO277A 分立半导体产品二极管 - 整流器 - 单	ETC 知名厂家	ETC
V10P10HE3/86A	封装/外壳：TO-277，3-PowerDFN 包装：散装描述：DIODE SCHOTTKY 100V 10A TO277A 分立半导体产品二极管 - 整流器 - 单	ETC 知名厂家	ETC
V10P10HM3-86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：95.66 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10HM3-87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：95.66 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-M3-86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：95.66 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
V10P10-M3-87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：95.66 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
MDT10P10	8-bit micro-controller 文件：154.78 Kbytes Page：16 Pages	MDTIC 麦肯积体电路	MDTIC
MDT10P10	8-bit micro-controller 文件：159.97 Kbytes Page：16 Pages	MDTIC 麦肯积体电路	MDTIC
MDT10P10BE	8-bit micro-controller 文件：159.97 Kbytes Page：16 Pages	MDTIC 麦肯积体电路	MDTIC
MDT10P10BG	8-bit micro-controller 文件：132.75 Kbytes Page：16 Pages	MDTIC 麦肯积体电路	MDTIC

V10P10产品属性

类型
描述
型号
V10P10
制造商
VISHAY
制造商全称
Vishay Siliconix
功能描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

V10P10供应商更多...

更新时间：2026-5-20 15:47:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
柒号芯城电子商务(深圳)有限公司	V10P10-M3/86A	VISHAY	2025+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市科恒伟业电子有限公司	V10P10HM3-A/H	VISHAY	24+	TO277	8500	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市海天鸿电子科技有限公司	V10P10-M3/86A	VISHAY	2320+	TO277A	5000	只做原装,特价清货!	询价
深圳市明嘉莱科技有限公司	V10P10-M3/86A	VISHAY SEMICONDUCTOR	25+	SMD	918000	明嘉莱只做原装正品现货	询价
深圳市宇创芯科技有限公司	V10P10-M3/86A	VISHAY(威世)	24+	N/A	12980	原装正品现货支持实单	询价
深圳市东来宝电子科技有限公司	V10P10-M3/86A	VISHAY	24+	Tube	75000	郑重承诺只做原装进口现货	询价
深圳市联世界科技有限公司	V10P10-M3/86A	VISHAY/威世	22+		190	原装认证/挂了就有现货的	询价
中天科工半导体（深圳）有限公司	V10P10-M3/86A	VISHAY/威世	25+	TO-277A(SMPC)	48193	VISHAY/威世全新特价V10P10-M3/86A即刻询购立享优惠#长期有货	询价
深圳市芯皇电子有限公司	V10P10-M3/86A	VISHAY/威世	TO-277A	23+	6000	专业配单原装正品假一罚十	询价
深圳市欧立现代科技有限公司	V10P10-M3/86A	VISHAY	24+	TO-277A	19518	绝对原装现货,价格低,欢迎询购!	询价

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找IC，尽在114IC

V10P10价格

V10P10产品属性

V10P10供应商更多...

V10P10芯片相关品牌

V10P10规格书下载地址

V10P10参数引脚图相关

V10P10数据表相关新闻

V23047-A1024-A511

UZ1086G-SOT223R-AD-TG_UTC代理商

UXN40M7K

UXN40M7K

V15PM15-M3/H

V23079-A1006-B201

DdatasheetPDF页码索引