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V10P10价格

参考价格：￥2.3115

型号：V10P10HM3/86A 品牌：Vishay 备注：这里有V10P10多少钱，2025年最近7天走势，今日出价，今日竞价，V10P10批发/采购报价，V10P10行情走势销售排行榜，V10P10报价。

型号	功能描述	生产厂家企业	LOGO
V10P10	High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier Ultra Low FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10	High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.453 V at IF = 5 A	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10	10 Ampere Lower VF Miniature Surface Mount Schottky Barrier Rectifier 文件：380.67 Kbytes Page：2 Pages	THINKISEMI 思祁半导体	THINKISEMI
V10P10	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：95.66 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10_V01	High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier Ultra Low FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-E3	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-E3/86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-E3/87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-E386A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-E387A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-E3SLASH86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-E3SLASH87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10HE3	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10HE3/86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10HE3/87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10HE386A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10HE387A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10HE3SLASH86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10HE3SLASH87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10HM3	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10HM3/86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10HM3/87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10HM386A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10HM387A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10HM3SLASH86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10HM3SLASH87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-M3	THINKI 10 Ampere,100 Volt Trench Process Low Vf Schottky Barrier Rectifier Features Low forward voltage drop ThinkiSemi matured trench barrier schottky High current capability High surge current capability Low reverse leakage current Application Inverter/Amplifier Photovoltaic Solar Cell Protection/SMPS Battery Reverse Protection Circuit/Charger	THINKISEMI 思祁半导体	THINKISEMI
V10P10-M3	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-M3/86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-M3/87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-M386A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-M387A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-M3SLASH86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-M3SLASH87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10_11	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：95.66 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10_15	MOS Barrier Schottky Rectifier Ultra Low 文件：539.52 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10_15	High Current Density Surface Mount MOS Barrier Schottky Rectifier Ultra Low 文件：549.88 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-E3/87A	封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR）描述：DIODE SCHOTTKY 100V 10A TO277A 分立半导体产品二极管 - 整流器 - 单	ETC 知名厂家	ETC
V10P10HE3/86A	封装/外壳：TO-277，3-PowerDFN 包装：散装描述：DIODE SCHOTTKY 100V 10A TO277A 分立半导体产品二极管 - 整流器 - 单	ETC 知名厂家	ETC
V10P10HM3-86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：95.66 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10HM3-87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：95.66 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-M3-86A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：95.66 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V10P10-M3-87A	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：95.66 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
A10P10	Continuous Hinge with Clamps, Type 12 APPLICATION This easy-to-open, continuous hinge enclosure features screwdown clamps for secure closure and can be used in a wide variety of applications.	HOFFMANPRODUCTS	HOFFMANPRODUCTS
A10P10	Continuous Hinge with Clamps, Type 4 APPLICATION A continuous hinge combined with stainless steel clamps on three sides provide environmental protection and security in indoor or outdoor applications.	HOFFMANPRODUCTS	HOFFMANPRODUCTS
10P10GJ-HF	P-Channel 100 V (D-S) MOSFET 文件：1.59014 Mbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
A10P10	Panels and Panel Accessories 文件：2.00209 Mbytes Page：16 Pages	PENTAIR 滨特尔	PENTAIR
A10P10AL	Panels and Panel Accessories 文件：2.00209 Mbytes Page：16 Pages	PENTAIR 滨特尔	PENTAIR

V10P10产品属性

类型
描述
型号
V10P10
制造商
VISHAY
制造商全称
Vishay Siliconix
功能描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

V10P10供应商更多...

更新时间：2025-11-20 14:45:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	V10P10HM3/86A	Vishay General Semiconductor -	25+	TO-277A(SMPC)	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市朱博士电子科技有限公司	V10P10-M3/86A	Vishay(威世)	2526+	SMPC(TO-277A)	50000	只做原装优势现货库存,渠道可追溯	询价
深圳市英创达电子半导体有限公司	V10P10HM3_A/H	VISHAY/威世	2025+	SMD	32000	原装正品现货供应商原厂渠道物美价优	询价
深圳市中联芯电子有限公司	V10P10-M3/86A	Vishay/威士	24+	TO-227A	11000	原装正品有挂有货假一赔十	询价
深圳市宇创芯科技有限公司	V10P10-M3/86A	VISHAY(威世)	24+	N/A	12980	原装正品现货支持实单	询价
深圳市宇集芯电子有限公司	V10P10-M3/86A	VISHAY	24+	SMPC(TO-277A)	90000	一级代理商进口原装现货、价格合理	询价
深圳市中远芯科技有限公司	V10P10-M3/86A	VISHAY/威世	17+	TO-277A	522	原装现货	询价
深圳市美思瑞电子科技有限公司	V10P10-M3/86A	VISHAY/威世	22+	TO-277A-3	12245	现货,原厂原装假一罚十!	询价
深圳市昂芯微科技有限公司	V10P10-M3/86A	VISHAY/威世	23+	SMPC(T	8215	原厂原装	询价
深圳市旭升微芯科技有限公司	V10P10HM3_A/H	Vishay	23+		7500	加QQ:78517935原装正品有单必成	询价

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V10P10价格

V10P10产品属性

V10P10供应商更多...

V10P10芯片相关品牌

V10P10规格书下载地址

V10P10参数引脚图相关

V10P10数据表相关新闻

V23047-A1024-A511

UZ1086G-SOT223R-AD-TG_UTC代理商

UXN40M7K

UXN40M7K

V15PM15-M3/H

V23079-A1006-B201

DdatasheetPDF页码索引