Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified a

Trench MOS Schottky technology generation 2

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Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified a

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：94.63 Kbytes Page：5 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：卷带（TR） 描述：DIODE SCHOTTKY 200V 10A SMPD 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：管件 描述：DIODE ARRAY SCHOTTKY 200V SMPD 分立半导体产品 二极管 - 整流器 - 阵列

Pigtail Integrated InGaAs PIN Photodiode Array

文件：272.76 Kbytes Page：2 Pages