flow through design makes the SLVU2.8-4.TBT

contact discharge. The SLVU2.8-4.TBT is assembled

SLVU2.8-4

The SLVU2.8-4.TBT

Description

is designed to protect low

voltage,CMOS semiconductors from transients

caused by electrostatic discharge(ESD),cable

discharge events(CDE), lightning and other

induced voltage surges. Low capacitance

compensation diode is integrated into the TVS to

lower the typical capacitance to 6pF per line. The

complies with the IEC 61000-4-2

ESD) standard with ±30kV air and ±30kV

into a 8-pin lead-free SO-8 package. The

combination of low leakage, signal integrity and

an ideal application such as 10/100/1000 Ethernet.

Features

100W peak pulse power(8/20μs)

Protects two line pairs(four lines)

Ultra low leakage：nA level

Low operating voltage：2.8V

Low capacitance

Ultra low clamping voltage

JEDEC SO-8 package

Complies with following standards:

IEC 61000-4-2 (ESD) immunity test

Air discharge: ±30kV

Contact discharge: ±30kV

IEC61000-4-4 (EFT) 40A (5/50ns)

IEC61000-4-5 (Lightning) 10A (8/20μs)

RoHS Compliant

Applications

Base Station

Analog Inputs

Switch Systems

10/100/1000 Ethernet

WAN/LAN Equipment

Desktops, Servers, and Notebooks

Low Voltage Interfaces