60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT60N10 is suitable for motor control, DC-DC converters and audio amplifi

60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge.The UTC UTT60N10 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc • RDS(ON)=18mΩ @ VGS=10V,ID=20A\n• High Switching Speed\n• High Current Capacity\n• Low Gate Charge(typical 50nC);

60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT60N10 is suitable for motor control, DC-DC converters and audio amplifi

60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT60N10 is suitable for motor control, DC-DC converters and audio amplifi

Trench Power MOSFET  (N-CH)

The UTC UTT60N10M is N-channel enhancement mode powerMOSFET using UTC’s advanced technology to provide customerswith high switching speed, a extremely low RDS(ON) and low gate charge. The UTC  UTT60N10M  is suitable for high frequency Point-of-Load Synchronous, Networking DC-DC System, CCFL Back-lig RDS(ON) <1.0 mΩ @ VGS=10V, ID=30AGreen Device AvailableLow Gate Charge  Surface mount package;

N-CHANNEL MOSFET TRANSISTOR

文件：215.35 Kbytes Page：5 Pages

N-CHANNEL MOSFET TRANSISTOR

文件：215.35 Kbytes Page：5 Pages

N-CHANNEL MOSFET TRANSISTOR

文件：215.35 Kbytes Page：5 Pages

N-CHANNEL MOSFET TRANSISTOR

文件：215.35 Kbytes Page：5 Pages

N-CHANNEL MOSFET TRANSISTOR

文件：215.35 Kbytes Page：5 Pages

N-CHANNEL MOSFET TRANSISTOR

文件：215.35 Kbytes Page：5 Pages

N-CHANNEL MOSFET TRANSISTOR

文件：215.35 Kbytes Page：5 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.05108 Mbytes Page：4 Pages

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.02 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100C ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.02 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100C ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.02 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100C ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLI

LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

文件：75.94 Kbytes Page：8 Pages

LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

文件：75.94 Kbytes Page：8 Pages