60A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

DESCRIPTION The UTC UTT60N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT60N05 is suitable for motor control, AC-DC or DC-DC converters and audi

60A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

The UTC UTT60N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge.The UTC UTT60N05 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc • RDS(ON)=14mΩ @ VGS=10V,ID=20A\n• High Current Capacity\n• Low Gate Charge(typical 39nC);

60A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

DESCRIPTION The UTC UTT60N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT60N05 is suitable for motor control, AC-DC or DC-DC converters and audi

60A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

DESCRIPTION The UTC UTT60N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT60N05 is suitable for motor control, AC-DC or DC-DC converters and audi

TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM

TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commuta tion modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low vol

TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM

TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commuta tion modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low vol

LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

DESCRIPTION This series of hermetic packaged MOSFETs are ideally suited for low voltage applications; battery powered voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate charge simpler dr

Fast Switching Speed

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N CHANNEL POWER MOSFETS

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