TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM

TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commuta tion modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low vol

TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM

TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commuta tion modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low vol

60A, 50V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 60N05 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc

Fast Switching Speed

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N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET

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N?묬hannel Power MOSFET

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