Trench Power MOSFET  (N-CH)

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 150V RDSON (MAX.) 250mΩ ID 5A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

150V N-Channel MOSFET

Features • 4.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V • Low gate charge ( typical 13 nC) • Low Crss ( typical 8.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

150V N-Channel MOSFET

150V N-Channel MOSFET

N-Channel QFET짰 MOSFET 150 V, 4.3 A, 800 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.3A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.