36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

DESCRIPTION The UTC UTT36N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT36N05 is suitable for motor control, AC-DC or DC-DC converters and audi

36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

DESCRIPTION The UTC UTT36N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT36N05 is suitable for motor control, AC-DC or DC-DC converters and audi

36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

DESCRIPTION The UTC UTT36N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT36N05 is suitable for motor control, AC-DC or DC-DC converters and audi

N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

文件：214.91 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

文件：214.91 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

文件：214.91 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

文件：214.91 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 36A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.04Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.033 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPERATING TEMPERATURE ■ APPLICATION OR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.033 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPERATING TEMPERATURE ■ APPLICATION OR

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 21A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.04Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.