-1.95 Amps, -30 Volts   P-CHANNEL POWER MOSFET

The UTR4502 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON)< 155mΩ @VGS=-10V \n• RDS(ON)< 240mΩ @VGS=-4.5V \n• Low capacitance \n• Optimized gate charge \n• Fast switching capability \n• Avalanche energy specified;

-1.95 Amps, -30 Volts P-CHANNEL POWER MOSFET

文件：223.42 Kbytes Page：4 Pages

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

-1.95 Amps, -30 Volts P-CHANNEL POWER MOSFET

文件：223.42 Kbytes Page：4 Pages

-1.95 Amps, -30 Volts P-CHANNEL POWER MOSFET

文件：223.42 Kbytes Page：4 Pages

-1.95 Amps, -30 Volts P-CHANNEL POWER MOSFET

文件：223.42 Kbytes Page：4 Pages

-1.95 Amps, -30 Volts P-CHANNEL POWER MOSFET

文件：223.42 Kbytes Page：4 Pages

Strobed hex inverter/buffer

The HEF4502B consists of six inverter/buffers with 3-state outputs. When the output enable input (EO) is HIGH all six outputs (O1to O6) are in the high impedance OFF-state. When the enable input (E) is HIGH all six outputs are switched to LOW. The outputs have a 2-TTL load drive capability.

Strobed hex inverter/buffer

The HEF4502B consists of six inverter/buffers with 3-state outputs. When the output enable input (EO) is HIGH all six outputs (O1to O6) are in the high impedance OFF-state. When the enable input (E) is HIGH all six outputs are switched to LOW. The outputs have a 2-TTL load drive capability.

Strobed hex inverter/buffer

The HEF4502B consists of six inverter/buffers with 3-state outputs. When the output enable input (EO) is HIGH all six outputs (O1to O6) are in the high impedance OFF-state. When the enable input (E) is HIGH all six outputs are switched to LOW. The outputs have a 2-TTL load drive capability.

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half