High-Power PNP Silicon Transistor

High-Power PNP Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the NPN MJ802 • Pb−Free Package

Power Transistors

Power Transistors TO-3 Case (Continued)

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS

30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS

High-Power PNP Silicon Transistor . . . for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the NPN MJ802

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type MJ802 • Excellent safe operating area APPLICATIONS • For use as an output device in complementary audio amplifiers to 100-Watts music power per channel

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type MJ802 • Excellent safe operating area APPLICATIONS • For use as an output device in complementary audio amplifiers to 100-Watts music power per channel

COMPLEMENTARY HIGH POWER TRANSISTORS

DESCRIPTION The MJ802 (NPN) and MJ4502 (PNP) are silicon epitaxial-base complementary power transistors in Jedec TO-3 metal case, intended for general purpose power amplifier and switching applications.

30 A, 100 V PNP Bipolar Power Transistor

This transistor is for use as an output device in complementary audio amplifiers to 100¿Watts music power per channel. • High DC Current Gain hFE = 25-100 @ IC = 7.5 A\n• Excellent Safe Operating Area\n• Complement to the NPN MJ802\n• Pb-Free Package is Available;

Silicon NPN Power Transistors

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High-Power PNP Silicon Transistor

High-Power PNP Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the NPN MJ802 • Pb−Free Package

封装/外壳：TO-204AA，TO-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 100V 30A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Strobed hex inverter/buffer

The HEF4502B consists of six inverter/buffers with 3-state outputs. When the output enable input (EO) is HIGH all six outputs (O1to O6) are in the high impedance OFF-state. When the enable input (E) is HIGH all six outputs are switched to LOW. The outputs have a 2-TTL load drive capability.

Strobed hex inverter/buffer

The HEF4502B consists of six inverter/buffers with 3-state outputs. When the output enable input (EO) is HIGH all six outputs (O1to O6) are in the high impedance OFF-state. When the enable input (E) is HIGH all six outputs are switched to LOW. The outputs have a 2-TTL load drive capability.

Strobed hex inverter/buffer

The HEF4502B consists of six inverter/buffers with 3-state outputs. When the output enable input (EO) is HIGH all six outputs (O1to O6) are in the high impedance OFF-state. When the enable input (E) is HIGH all six outputs are switched to LOW. The outputs have a 2-TTL load drive capability.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half