N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

Trench Power MOSFET  (N-CH)

The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON) = 15mΩ @VGS = 10 V \n• Low gate charge \n• Avalanche energy specified;

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：331.07 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：331.07 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：331.07 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：331.07 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：331.07 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：331.07 Kbytes Page：8 Pages

Band-switching diodes

DESCRIPTION Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.0 to 1.6 pF • Low diode forward resistance:

Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz

Description: The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration for extremely broadband performance and optimum gain characteristics. Features:

GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm

GaAIAs Infrared Emitters (880 nm) Features ●Fabricated in a liquid phase epitaxy process ●High reliability ●Spectral match with silicon photodetectors ●SFH 484: Same package as LD 274 ●SFH 485: Same package as SFH 300, SFH 203 Applications ●IR remote control of hi-fi an

Precision Rail-to-Rail Input & Output Operational Amplifiers

文件：522.84 Kbytes Page：20 Pages

Precision Rail-to-Rail Input & Output Operational Amplifiers

文件：522.84 Kbytes Page：20 Pages